Film morphology and reaction rate for the CVD of tungsten by the WF₆-SiH₄ reaction

Engineering & Materials Science

• Activation energy 44%
• Atoms 44%
• Byproducts 22%
• Chemical vapor deposition 100%
• Film thickness 23%
• Gases 24%
• Low pressure chemical vapor deposition 35%
• Mass transfer 19%
• Reaction rates 97%
• Surface reactions 30%
• Temperature 17%
• Thick films 26%
• Tungsten 92%

Physics & Astronomy

• activation energy 31%
• atoms 21%
• cold walls 29%
• film thickness 17%
• low pressure 35%
• reaction kinetics 78%
• reaction time 50%
• reactors 16%
• surface reactions 22%
• temperature 6%
• thick films 20%
• tungsten 72%
• vapor deposition 65%
• vapor phases 34%
• wafers 16%

Chemical Compounds

• Amount 9%
• Liquid Film 41%
• Low Pressure Chemical Vapour Deposition 31%
• Mass Transfer 17%
• Pressure 49%
• Reaction Activation Energy 29%
• Reduction 9%
• Surface 13%
• Surface Reaction 22%
• Time 15%
• Tungsten 78%