Flat-band voltage study of atomic-layer-deposited aluminum-oxide subjected to spike thermal annealing

Keyphrases

• High-k Dielectric 100%
• Oxides 100%
• Atomic Layer Deposition 100%
• Aluminum Oxide 100%
• Thermal Annealing 100%
• Flat-band Voltage 100%
• Atomic Layer Deposited 100%
• Annealing 66%
• Silica 66%
• In Situ 33%
• Electrical Activation 33%
• Dielectric Film 33%
• Atomic Diffusion 33%
• Post-deposition Annealing 33%
• Annealing Temperature 33%
• Amorphous Si 33%
• Si Wafer 33%
• Low Thermal Budget 33%
• P-type Doping 33%
• Oxide Film 33%
• Poly-Si 33%
• Positive Shifts 33%
• Heavily Doped 33%
• P-type Si 33%
• C-V Measurement 33%
• Thermal Oxide 33%
• Al Oxide 33%
• Oxynitride 33%
• Nitridation 33%
• Gate Electrode 33%
• Oxide Thickness 33%
• MOS Structure 33%
• Si Electrode 33%
• Spike Annealing 33%
• Peak Temperature 33%
• Dot Pattern 33%

Engineering

• Atomic Layer 100%
• Atomic Layer Deposition 100%
• Aluminum Oxide 100%
• Dielectrics 66%
• Atomic Diffusion 33%
• Deposited Film 33%
• Annealing Temperature 33%
• Si Wafer 33%
• Oxide Film 33%
• Dielectric Film 33%
• Oxide Thickness 33%
• Gate Electrode 33%
• Peak Temperature 33%

Material Science

• Oxide Compound 100%
• Annealing 100%
• Aluminum Oxide 100%
• Film 80%
• Dielectric Material 40%
• Dielectric Films 20%
• Amorphous Material 20%
• Oxide Film 20%
• Film Deposition 20%
• Nitriding 20%
• Oxynitride 20%