Abstract
A new flexible low-pressure sensor design with convention architectures of n-type doped hydrogenated amorphous silicon with metal-on-amorphous silicon contacts on flexible substrate is fabricated. The sensing elements are wired according to a full Wheatstone-bridge layout, to reduce any temperature effects. These low-pressure sensors are subjected to repetitive strains/pressure testing. The experiment demonstrates a linear pressure relationship in the 0-2.0 psi range with a sensitivity of 1.953 ± 0.020 mV/psi. The measurements observed are in good agreement with the analytical solution.
Original language | English (US) |
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Pages (from-to) | 332-335 |
Number of pages | 4 |
Journal | Sensors and Actuators, A: Physical |
Volume | 119 |
Issue number | 2 |
DOIs | |
State | Published - Apr 13 2005 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Metals and Alloys
- Electrical and Electronic Engineering
Keywords
- Flexible substrate
- Membrane
- Pressure sensor