Formation of silicon tips with <1 nm radius

R. B. Marcus; T. S. Ravi; T. Gmitter; K. Chin; D. Liu; W. J. Orvis; D. R. Ciarlo; C. E. Hunt; J. Trujillo

doi:10.1063/1.102841

Formation of silicon tips with <1 nm radius

R. B. Marcus, T. S. Ravi, T. Gmitter, K. Chin, D. Liu, W. J. Orvis, D. R. Ciarlo, C. E. Hunt, J. Trujillo

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Abstract

Electron emitters in vacuum microelectronic devices need sharp tips in order to permit electron emission at moderate voltages. A method has been found for preparing uniform silicon tips with a radius of curvature less than 1 nm. These tips are formed by oxidation of 5-μm-high silicon cones through exploitation of a known oxidation inhibition of silicon at regions of high curvature.

Original language	English (US)
Pages (from-to)	236-238
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	3
DOIs	https://doi.org/10.1063/1.102841
State	Published - 1990

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.102841

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title = "Formation of silicon tips with <1 nm radius",

abstract = "Electron emitters in vacuum microelectronic devices need sharp tips in order to permit electron emission at moderate voltages. A method has been found for preparing uniform silicon tips with a radius of curvature less than 1 nm. These tips are formed by oxidation of 5-μm-high silicon cones through exploitation of a known oxidation inhibition of silicon at regions of high curvature.",

author = "Marcus, {R. B.} and Ravi, {T. S.} and T. Gmitter and K. Chin and D. Liu and Orvis, {W. J.} and Ciarlo, {D. R.} and Hunt, {C. E.} and J. Trujillo",

year = "1990",

doi = "10.1063/1.102841",

language = "English (US)",

volume = "56",

pages = "236--238",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Formation of silicon tips with <1 nm radius

AU - Marcus, R. B.

AU - Ravi, T. S.

AU - Gmitter, T.

AU - Chin, K.

AU - Liu, D.

AU - Orvis, W. J.

AU - Ciarlo, D. R.

AU - Hunt, C. E.

AU - Trujillo, J.

PY - 1990

Y1 - 1990

N2 - Electron emitters in vacuum microelectronic devices need sharp tips in order to permit electron emission at moderate voltages. A method has been found for preparing uniform silicon tips with a radius of curvature less than 1 nm. These tips are formed by oxidation of 5-μm-high silicon cones through exploitation of a known oxidation inhibition of silicon at regions of high curvature.

AB - Electron emitters in vacuum microelectronic devices need sharp tips in order to permit electron emission at moderate voltages. A method has been found for preparing uniform silicon tips with a radius of curvature less than 1 nm. These tips are formed by oxidation of 5-μm-high silicon cones through exploitation of a known oxidation inhibition of silicon at regions of high curvature.

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DO - 10.1063/1.102841

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Formation of silicon tips with <1 nm radius

Abstract

All Science Journal Classification (ASJC) codes

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