Formation of silicon tips with <1 nm radius

R. B. Marcus, T. S. Ravi, T. Gmitter, K. Chin, D. Liu, W. J. Orvis, D. R. Ciarlo, C. E. Hunt, J. Trujillo

Research output: Contribution to journalArticlepeer-review

229 Scopus citations

Abstract

Electron emitters in vacuum microelectronic devices need sharp tips in order to permit electron emission at moderate voltages. A method has been found for preparing uniform silicon tips with a radius of curvature less than 1 nm. These tips are formed by oxidation of 5-μm-high silicon cones through exploitation of a known oxidation inhibition of silicon at regions of high curvature.

Original languageEnglish (US)
Pages (from-to)236-238
Number of pages3
JournalApplied Physics Letters
Volume56
Issue number3
DOIs
StatePublished - Dec 1 1990

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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