Formation of TiSi₂/n ⁺ /p‐Silicon Junctions by Implantation through Metal Technique

Experimental studies of the formation and electrical characterization of TiSi₂/n ⁺ /p‐Si shallow junctions are presented. The formation of shallow n ⁺ p junction, by ion implantation of As ⁺ through Ti films evaporated on p‐Si substrates followed by rapid thermal annealing (RTA) and conventional furnace annealing, is performed in these experiments. Structural techniques such as secondary ion mass spectroscopy (SIMS) and Rutherford backscattering (RBS) experiments are employed to characterize these devices. RUMP simulations are deployed to analyze and interpret the RBS data. Temperature dependent current‐voltage measurements of these junctions are performed in the temperature range of 250 to 400 K. Interpretations for these results are sought from conventional pn junction theory.