Fowler-Nordheim tunneling in thin SiO2 films

N. M. Ravindra, Jin Zhao

Research output: Contribution to journalArticlepeer-review

49 Scopus citations

Abstract

An analysis of the Fowler-Nordheim tunneling (FNT) theory and its application to temperature-dependent current-voltage characteristics of very thin films SiO2 on silicon, is presented. The final results are believed to provide the most complete examination of FN emission theory and predict the breakdown electric field in thin SiO2 films. The role of the roughness, at the Si-SiO2 interface, in determining the FNT current in these structures is also discussed.

Original languageEnglish (US)
Pages (from-to)197-201
Number of pages5
JournalSmart Materials and Structures
Volume1
Issue number3
DOIs
StatePublished - Sep 1992

All Science Journal Classification (ASJC) codes

  • Signal Processing
  • Civil and Structural Engineering
  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Electrical and Electronic Engineering

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