Free-charge carrier profile of iso- and aniso-type Si homojunctions determined by terahertz and mid-infrared ellipsometry

A. Boosalis; T. Hofmann; J. Šik; M. Schubert

doi:10.1016/j.tsf.2010.11.092

Free-charge carrier profile of iso- and aniso-type Si homojunctions determined by terahertz and mid-infrared ellipsometry

A. Boosalis
, T. Hofmann
, J. Šik
, M. Schubert

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We present an optical, non-destructive, non-contact method of determining the silicon homojunction epilayer free-charge carrier concentration profile and thickness by means of combined terahertz (0.2-1 THz) and mid-infrared (10-50 THz) spectroscopic ellipsometry investigation. A dual homojunction iso- and aniso-type silicon sample is investigated. Application of analytical models for iso-type and aniso-type homojunctions results in an excellent match between calculated and experimental data. Best-match model calculated parameters are found to be consistent with electrical spreading resistance epilayer thickness and resistivity values.

Original language	English (US)
Pages (from-to)	2604-2607
Number of pages	4
Journal	Thin Solid Films
Volume	519
Issue number	9
DOIs	https://doi.org/10.1016/j.tsf.2010.11.092
State	Published - Feb 28 2011
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Keywords

Homojunction
Isotype
Silicon
Spectroscopic ellipsometry
Terahertz

Access to Document

10.1016/j.tsf.2010.11.092

Cite this

@article{44701ae65d9b46739d1ff9fa8737eaeb,

title = "Free-charge carrier profile of iso- and aniso-type Si homojunctions determined by terahertz and mid-infrared ellipsometry",

abstract = "We present an optical, non-destructive, non-contact method of determining the silicon homojunction epilayer free-charge carrier concentration profile and thickness by means of combined terahertz (0.2-1 THz) and mid-infrared (10-50 THz) spectroscopic ellipsometry investigation. A dual homojunction iso- and aniso-type silicon sample is investigated. Application of analytical models for iso-type and aniso-type homojunctions results in an excellent match between calculated and experimental data. Best-match model calculated parameters are found to be consistent with electrical spreading resistance epilayer thickness and resistivity values.",

keywords = "Homojunction, Isotype, Silicon, Spectroscopic ellipsometry, Terahertz",

author = "A. Boosalis and T. Hofmann and J. {\v S}ik and M. Schubert",

year = "2011",

month = feb,

day = "28",

doi = "10.1016/j.tsf.2010.11.092",

language = "English (US)",

volume = "519",

pages = "2604--2607",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "9",

}

TY - JOUR

T1 - Free-charge carrier profile of iso- and aniso-type Si homojunctions determined by terahertz and mid-infrared ellipsometry

AU - Boosalis, A.

AU - Hofmann, T.

AU - Šik, J.

AU - Schubert, M.

PY - 2011/2/28

Y1 - 2011/2/28

N2 - We present an optical, non-destructive, non-contact method of determining the silicon homojunction epilayer free-charge carrier concentration profile and thickness by means of combined terahertz (0.2-1 THz) and mid-infrared (10-50 THz) spectroscopic ellipsometry investigation. A dual homojunction iso- and aniso-type silicon sample is investigated. Application of analytical models for iso-type and aniso-type homojunctions results in an excellent match between calculated and experimental data. Best-match model calculated parameters are found to be consistent with electrical spreading resistance epilayer thickness and resistivity values.

AB - We present an optical, non-destructive, non-contact method of determining the silicon homojunction epilayer free-charge carrier concentration profile and thickness by means of combined terahertz (0.2-1 THz) and mid-infrared (10-50 THz) spectroscopic ellipsometry investigation. A dual homojunction iso- and aniso-type silicon sample is investigated. Application of analytical models for iso-type and aniso-type homojunctions results in an excellent match between calculated and experimental data. Best-match model calculated parameters are found to be consistent with electrical spreading resistance epilayer thickness and resistivity values.

KW - Homojunction

KW - Isotype

KW - Silicon

KW - Spectroscopic ellipsometry

KW - Terahertz

UR - https://www.scopus.com/pages/publications/79952627198

UR - https://www.scopus.com/pages/publications/79952627198#tab=citedBy

U2 - 10.1016/j.tsf.2010.11.092

DO - 10.1016/j.tsf.2010.11.092

M3 - Article

AN - SCOPUS:79952627198

SN - 0040-6090

VL - 519

SP - 2604

EP - 2607

JO - Thin Solid Films

JF - Thin Solid Films

IS - 9

ER -

Free-charge carrier profile of iso- and aniso-type Si homojunctions determined by terahertz and mid-infrared ellipsometry

Abstract

All Science Journal Classification (ASJC) codes

Keywords

Access to Document

Other files and links

Fingerprint

Cite this