Frequency and area dependence of High-K/Ge MOS capacitors

I. Mitevski; D. Misra; M. N. Bhuyian; Y. Ding

doi:10.1149/07711.1977ecst

Frequency and area dependence of High-K/Ge MOS capacitors

I. Mitevski, D. Misra, M. N. Bhuyian, Y. Ding

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper investigates the capacitance-voltage (C-V) measurements of Ge/A1₂O₃/ZrO₂/TiN MOS capacitors at different frequencies for square devices with different side lengths (10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 100μm). The results show that the series resistance corrected capacitance (C_c) for accumulation region is dependent on frequency, devices substrate and area. C_c increases at a faster pace when a lower frequency (lKHz) is used than at a higher frequency (1MHz). Substantial decrease of C_c per unit area is reported in Ge/High-K in comparison to Si/High-K devices when device area is increased. This decrease is attributed to the large non-uniform interface defect density and high leakage current associated with Ge.

Original language	English (US)
Title of host publication	Selected Proceedings from the 231st ECS Meeting New Orleans, LA - Spring 2017
Publisher	Electrochemical Society Inc.
Pages	1977-1984
Number of pages	8
Edition	11
ISBN (Electronic)	9781607688174
ISBN (Print)	9781623324605
DOIs	https://doi.org/10.1149/07711.1977ecst
State	Published - 2017
Event	231st ECS Meeting - New Orleans, United States Duration: May 28 2017 → Jun 1 2017

Publication series

Name	ECS Transactions
Number	11
Volume	77
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	231st ECS Meeting
Country/Territory	United States
City	New Orleans
Period	5/28/17 → 6/1/17

All Science Journal Classification (ASJC) codes

General Engineering

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10.1149/07711.1977ecst

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@inproceedings{84a0634f369c4e27a03d62fcc5f84565,

title = "Frequency and area dependence of High-K/Ge MOS capacitors",

abstract = "This paper investigates the capacitance-voltage (C-V) measurements of Ge/A12O3/ZrO2/TiN MOS capacitors at different frequencies for square devices with different side lengths (10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 100μm). The results show that the series resistance corrected capacitance (Cc) for accumulation region is dependent on frequency, devices substrate and area. Cc increases at a faster pace when a lower frequency (lKHz) is used than at a higher frequency (1MHz). Substantial decrease of Cc per unit area is reported in Ge/High-K in comparison to Si/High-K devices when device area is increased. This decrease is attributed to the large non-uniform interface defect density and high leakage current associated with Ge.",

author = "I. Mitevski and D. Misra and Bhuyian, {M. N.} and Y. Ding",

year = "2017",

doi = "10.1149/07711.1977ecst",

language = "English (US)",

isbn = "9781623324605",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "11",

pages = "1977--1984",

booktitle = "Selected Proceedings from the 231st ECS Meeting New Orleans, LA - Spring 2017",

edition = "11",

}

Mitevski, I, Misra, D, Bhuyian, MN & Ding, Y 2017, Frequency and area dependence of High-K/Ge MOS capacitors. in Selected Proceedings from the 231st ECS Meeting New Orleans, LA - Spring 2017. 11 edn, ECS Transactions, no. 11, vol. 77, Electrochemical Society Inc., pp. 1977-1984, 231st ECS Meeting, New Orleans, United States, 5/28/17. https://doi.org/10.1149/07711.1977ecst

TY - GEN

T1 - Frequency and area dependence of High-K/Ge MOS capacitors

AU - Mitevski, I.

AU - Misra, D.

AU - Bhuyian, M. N.

AU - Ding, Y.

PY - 2017

Y1 - 2017

N2 - This paper investigates the capacitance-voltage (C-V) measurements of Ge/A12O3/ZrO2/TiN MOS capacitors at different frequencies for square devices with different side lengths (10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 100μm). The results show that the series resistance corrected capacitance (Cc) for accumulation region is dependent on frequency, devices substrate and area. Cc increases at a faster pace when a lower frequency (lKHz) is used than at a higher frequency (1MHz). Substantial decrease of Cc per unit area is reported in Ge/High-K in comparison to Si/High-K devices when device area is increased. This decrease is attributed to the large non-uniform interface defect density and high leakage current associated with Ge.

AB - This paper investigates the capacitance-voltage (C-V) measurements of Ge/A12O3/ZrO2/TiN MOS capacitors at different frequencies for square devices with different side lengths (10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 100μm). The results show that the series resistance corrected capacitance (Cc) for accumulation region is dependent on frequency, devices substrate and area. Cc increases at a faster pace when a lower frequency (lKHz) is used than at a higher frequency (1MHz). Substantial decrease of Cc per unit area is reported in Ge/High-K in comparison to Si/High-K devices when device area is increased. This decrease is attributed to the large non-uniform interface defect density and high leakage current associated with Ge.

UR - http://www.scopus.com/inward/record.url?scp=85030539067&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85030539067&partnerID=8YFLogxK

U2 - 10.1149/07711.1977ecst

DO - 10.1149/07711.1977ecst

M3 - Conference contribution

AN - SCOPUS:85030539067

SN - 9781623324605

T3 - ECS Transactions

SP - 1977

EP - 1984

BT - Selected Proceedings from the 231st ECS Meeting New Orleans, LA - Spring 2017

PB - Electrochemical Society Inc.

T2 - 231st ECS Meeting

Y2 - 28 May 2017 through 1 June 2017

ER -

Frequency and area dependence of High-K/Ge MOS capacitors

Abstract

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Other

All Science Journal Classification (ASJC) codes

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