Full-color InGaN/AlGaN nanowire micro light-emitting diodes grown by molecular beam epitaxy: A promising candidate for next generation micro displays

Ha Quoc Thang Bui; Ravi Teja Velpula; Barsha Jain; Omar Hamed Aref; Hoang Duy Nguyen; Trupti Ranjan Lenka; Hieu Pham Trung Nguyen

doi:10.3390/mi10080492

Full-color InGaN/AlGaN nanowire micro light-emitting diodes grown by molecular beam epitaxy: A promising candidate for next generation micro displays

Ha Quoc Thang Bui, Ravi Teja Velpula, Barsha Jain, Omar Hamed Aref, Hoang Duy Nguyen, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire μLED arrays were fabricated with their wavelengths tunable from blue to red by controlling the indium composition in the device active regions. Moreover, our fabricated phosphor-free white-color μLEDs demonstrate strong and highly stable white-light emission with high color rendering index of ~ 94. The μLEDs are in circular shapes with the diameter varying from 30 to 100 μm. Such high-performance μLEDs are perfectly suitable for the next generation of high-resolution micro-display applications.

Original language	English (US)
Article number	492
Journal	Micromachines
Volume	10
Issue number	8
DOIs	https://doi.org/10.3390/mi10080492
State	Published - Aug 1 2019

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Mechanical Engineering
Electrical and Electronic Engineering

Keywords

Core-shell structure
GaN nanowires
μLED displays
μLEDs

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10.3390/mi10080492

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@article{a2bee104ad1b4c899f5e378111e4ce99,

title = "Full-color InGaN/AlGaN nanowire micro light-emitting diodes grown by molecular beam epitaxy: A promising candidate for next generation micro displays",

abstract = "We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire μLED arrays were fabricated with their wavelengths tunable from blue to red by controlling the indium composition in the device active regions. Moreover, our fabricated phosphor-free white-color μLEDs demonstrate strong and highly stable white-light emission with high color rendering index of ~ 94. The μLEDs are in circular shapes with the diameter varying from 30 to 100 μm. Such high-performance μLEDs are perfectly suitable for the next generation of high-resolution micro-display applications.",

keywords = "Core-shell structure, GaN nanowires, μLED displays, μLEDs",

author = "Bui, {Ha Quoc Thang} and Velpula, {Ravi Teja} and Barsha Jain and Aref, {Omar Hamed} and Nguyen, {Hoang Duy} and Lenka, {Trupti Ranjan} and Nguyen, {Hieu Pham Trung}",

note = "Publisher Copyright: {\textcopyright} 2019 by the authors.",

year = "2019",

month = aug,

day = "1",

doi = "10.3390/mi10080492",

language = "English (US)",

volume = "10",

journal = "Micromachines",

issn = "2072-666X",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "8",

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T1 - Full-color InGaN/AlGaN nanowire micro light-emitting diodes grown by molecular beam epitaxy

T2 - A promising candidate for next generation micro displays

AU - Bui, Ha Quoc Thang

AU - Velpula, Ravi Teja

AU - Jain, Barsha

AU - Aref, Omar Hamed

AU - Nguyen, Hoang Duy

AU - Lenka, Trupti Ranjan

AU - Nguyen, Hieu Pham Trung

PY - 2019/8/1

Y1 - 2019/8/1

N2 - We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire μLED arrays were fabricated with their wavelengths tunable from blue to red by controlling the indium composition in the device active regions. Moreover, our fabricated phosphor-free white-color μLEDs demonstrate strong and highly stable white-light emission with high color rendering index of ~ 94. The μLEDs are in circular shapes with the diameter varying from 30 to 100 μm. Such high-performance μLEDs are perfectly suitable for the next generation of high-resolution micro-display applications.

AB - We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire μLED arrays were fabricated with their wavelengths tunable from blue to red by controlling the indium composition in the device active regions. Moreover, our fabricated phosphor-free white-color μLEDs demonstrate strong and highly stable white-light emission with high color rendering index of ~ 94. The μLEDs are in circular shapes with the diameter varying from 30 to 100 μm. Such high-performance μLEDs are perfectly suitable for the next generation of high-resolution micro-display applications.

KW - Core-shell structure

KW - GaN nanowires

KW - μLED displays

KW - μLEDs

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JO - Micromachines

JF - Micromachines

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M1 - 492

ER -

Full-color InGaN/AlGaN nanowire micro light-emitting diodes grown by molecular beam epitaxy: A promising candidate for next generation micro displays

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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