Full-color InGaN/AlGaN nanowire micro light-emitting diodes grown by molecular beam epitaxy: A promising candidate for next generation micro displays

Ha Quoc Thang Bui, Ravi Teja Velpula, Barsha Jain, Omar Hamed Aref, Hoang Duy Nguyen, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire μLED arrays were fabricated with their wavelengths tunable from blue to red by controlling the indium composition in the device active regions. Moreover, our fabricated phosphor-free white-color μLEDs demonstrate strong and highly stable white-light emission with high color rendering index of ~ 94. The μLEDs are in circular shapes with the diameter varying from 30 to 100 μm. Such high-performance μLEDs are perfectly suitable for the next generation of high-resolution micro-display applications.

Original languageEnglish (US)
Article number492
JournalMicromachines
Volume10
Issue number8
DOIs
StatePublished - Aug 1 2019

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Keywords

  • Core-shell structure
  • GaN nanowires
  • μLED displays
  • μLEDs

Fingerprint Dive into the research topics of 'Full-color InGaN/AlGaN nanowire micro light-emitting diodes grown by molecular beam epitaxy: A promising candidate for next generation micro displays'. Together they form a unique fingerprint.

Cite this