Full-color InGaN/AlGaN nanowire micro light-emitting diodes grown by molecular beam epitaxy: A promising candidate for next generation micro displays

Ha Quoc Thang Bui; Ravi Teja Velpula; Barsha Jain; Omar Hamed Aref; Hoang Duy Nguyen; Trupti Ranjan Lenka; Hieu Pham Trung Nguyen

doi:10.3390/mi10080492

Full-color InGaN/AlGaN nanowire micro light-emitting diodes grown by molecular beam epitaxy: A promising candidate for next generation micro displays

Ha Quoc Thang Bui
, Ravi Teja Velpula
, Barsha Jain
, Omar Hamed Aref
, Hoang Duy Nguyen
, Trupti Ranjan Lenka
, Hieu Pham Trung Nguyen

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire μLED arrays were fabricated with their wavelengths tunable from blue to red by controlling the indium composition in the device active regions. Moreover, our fabricated phosphor-free white-color μLEDs demonstrate strong and highly stable white-light emission with high color rendering index of ~ 94. The μLEDs are in circular shapes with the diameter varying from 30 to 100 μm. Such high-performance μLEDs are perfectly suitable for the next generation of high-resolution micro-display applications.

Original language	English (US)
Article number	492
Journal	Micromachines
Volume	10
Issue number	8
DOIs	https://doi.org/10.3390/mi10080492
State	Published - Aug 1 2019

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Mechanical Engineering
Electrical and Electronic Engineering

Keywords

Core-shell structure
GaN nanowires
μLED displays
μLEDs

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10.3390/mi10080492

Cite this

@article{a2bee104ad1b4c899f5e378111e4ce99,

title = "Full-color InGaN/AlGaN nanowire micro light-emitting diodes grown by molecular beam epitaxy: A promising candidate for next generation micro displays",

abstract = "We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire μLED arrays were fabricated with their wavelengths tunable from blue to red by controlling the indium composition in the device active regions. Moreover, our fabricated phosphor-free white-color μLEDs demonstrate strong and highly stable white-light emission with high color rendering index of \textasciitilde{} 94. The μLEDs are in circular shapes with the diameter varying from 30 to 100 μm. Such high-performance μLEDs are perfectly suitable for the next generation of high-resolution micro-display applications.",

keywords = "Core-shell structure, GaN nanowires, μLED displays, μLEDs",

author = "Bui, \{Ha Quoc Thang\} and Velpula, \{Ravi Teja\} and Barsha Jain and Aref, \{Omar Hamed\} and Nguyen, \{Hoang Duy\} and Lenka, \{Trupti Ranjan\} and Nguyen, \{Hieu Pham Trung\}",

note = "Publisher Copyright: {\textcopyright} 2019 by the authors.",

year = "2019",

month = aug,

day = "1",

doi = "10.3390/mi10080492",

language = "English (US)",

volume = "10",

journal = "Micromachines",

issn = "2072-666X",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "8",

}

TY - JOUR

T1 - Full-color InGaN/AlGaN nanowire micro light-emitting diodes grown by molecular beam epitaxy

T2 - A promising candidate for next generation micro displays

AU - Bui, Ha Quoc Thang

AU - Velpula, Ravi Teja

AU - Jain, Barsha

AU - Aref, Omar Hamed

AU - Nguyen, Hoang Duy

AU - Lenka, Trupti Ranjan

AU - Nguyen, Hieu Pham Trung

PY - 2019/8/1

Y1 - 2019/8/1

N2 - We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire μLED arrays were fabricated with their wavelengths tunable from blue to red by controlling the indium composition in the device active regions. Moreover, our fabricated phosphor-free white-color μLEDs demonstrate strong and highly stable white-light emission with high color rendering index of ~ 94. The μLEDs are in circular shapes with the diameter varying from 30 to 100 μm. Such high-performance μLEDs are perfectly suitable for the next generation of high-resolution micro-display applications.

AB - We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire μLED arrays were fabricated with their wavelengths tunable from blue to red by controlling the indium composition in the device active regions. Moreover, our fabricated phosphor-free white-color μLEDs demonstrate strong and highly stable white-light emission with high color rendering index of ~ 94. The μLEDs are in circular shapes with the diameter varying from 30 to 100 μm. Such high-performance μLEDs are perfectly suitable for the next generation of high-resolution micro-display applications.

KW - Core-shell structure

KW - GaN nanowires

KW - μLED displays

KW - μLEDs

UR - https://www.scopus.com/pages/publications/85070965831

UR - https://www.scopus.com/pages/publications/85070965831#tab=citedBy

U2 - 10.3390/mi10080492

DO - 10.3390/mi10080492

M3 - Article

AN - SCOPUS:85070965831

SN - 2072-666X

VL - 10

JO - Micromachines

JF - Micromachines

IS - 8

M1 - 492

ER -

Full-color InGaN/AlGaN nanowire micro light-emitting diodes grown by molecular beam epitaxy: A promising candidate for next generation micro displays

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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