Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon

Hieu Pham Trung Nguyen, Kai Cui, Shaofei Zhang, Saeed Fathololoumi, Zetian Mi

Research output: Contribution to journalArticlepeer-review

101 Scopus citations


We report on the achievement of a new class of nanowire light emitting diodes (LEDs), incorporating InGaN/GaN dot-in-a-wire nanoscale heterostructures grown directly on Si(111) substrates. Strong emission across nearly the entire visible wavelength range can be realized by varying the dot composition. Moreover, we have demonstrated phosphor-free white LEDs by controlling the indium content in the dots in a single epitaxial growth step. Such devices can exhibit relatively high internal quantum efficiency (>20%) and no apparent efficiency droop for current densities up to ∼ 200Acm- 2.

Original languageEnglish (US)
Article number445202
Issue number44
StatePublished - Nov 4 2011
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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