Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon

Hieu Pham Trung Nguyen; Kai Cui; Shaofei Zhang; Saeed Fathololoumi; Zetian Mi

doi:10.1088/0957-4484/22/44/445202

Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon

Hieu Pham Trung Nguyen, Kai Cui, Shaofei Zhang, Saeed Fathololoumi, Zetian Mi

Research output: Contribution to journal › Article › peer-review

102 Scopus citations

Abstract

We report on the achievement of a new class of nanowire light emitting diodes (LEDs), incorporating InGaN/GaN dot-in-a-wire nanoscale heterostructures grown directly on Si(111) substrates. Strong emission across nearly the entire visible wavelength range can be realized by varying the dot composition. Moreover, we have demonstrated phosphor-free white LEDs by controlling the indium content in the dots in a single epitaxial growth step. Such devices can exhibit relatively high internal quantum efficiency (>20%) and no apparent efficiency droop for current densities up to ∼ 200Acm^{- 2}.

Original language	English (US)
Article number	445202
Journal	Nanotechnology
Volume	22
Issue number	44
DOIs	https://doi.org/10.1088/0957-4484/22/44/445202
State	Published - Nov 4 2011
Externally published	Yes

All Science Journal Classification (ASJC) codes

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/22/44/445202

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title = "Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon",

abstract = "We report on the achievement of a new class of nanowire light emitting diodes (LEDs), incorporating InGaN/GaN dot-in-a-wire nanoscale heterostructures grown directly on Si(111) substrates. Strong emission across nearly the entire visible wavelength range can be realized by varying the dot composition. Moreover, we have demonstrated phosphor-free white LEDs by controlling the indium content in the dots in a single epitaxial growth step. Such devices can exhibit relatively high internal quantum efficiency (>20%) and no apparent efficiency droop for current densities up to ∼ 200Acm- 2.",

author = "Nguyen, {Hieu Pham Trung} and Kai Cui and Shaofei Zhang and Saeed Fathololoumi and Zetian Mi",

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AU - Nguyen, Hieu Pham Trung

AU - Cui, Kai

AU - Zhang, Shaofei

AU - Fathololoumi, Saeed

AU - Mi, Zetian

PY - 2011/11/4

Y1 - 2011/11/4

N2 - We report on the achievement of a new class of nanowire light emitting diodes (LEDs), incorporating InGaN/GaN dot-in-a-wire nanoscale heterostructures grown directly on Si(111) substrates. Strong emission across nearly the entire visible wavelength range can be realized by varying the dot composition. Moreover, we have demonstrated phosphor-free white LEDs by controlling the indium content in the dots in a single epitaxial growth step. Such devices can exhibit relatively high internal quantum efficiency (>20%) and no apparent efficiency droop for current densities up to ∼ 200Acm- 2.

AB - We report on the achievement of a new class of nanowire light emitting diodes (LEDs), incorporating InGaN/GaN dot-in-a-wire nanoscale heterostructures grown directly on Si(111) substrates. Strong emission across nearly the entire visible wavelength range can be realized by varying the dot composition. Moreover, we have demonstrated phosphor-free white LEDs by controlling the indium content in the dots in a single epitaxial growth step. Such devices can exhibit relatively high internal quantum efficiency (>20%) and no apparent efficiency droop for current densities up to ∼ 200Acm- 2.

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Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon

Abstract

All Science Journal Classification (ASJC) codes

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