GaInO3: A new transparent conducting oxide

R. J. Cava; Julia M. Phillips; J. Kwo; G. A. Thomas; R. B. Van Dover; S. A. Carter; J. J. Krajewski; W. F. Peck; J. H. Marshall; D. H. Rapkine

doi:10.1063/1.111686

GaInO₃: A new transparent conducting oxide

R. J. Cava, Julia M. Phillips, J. Kwo, G. A. Thomas, R. B. Van Dover, S. A. Carter, J. J. Krajewski, W. F. Peck, J. H. Marshall, D. H. Rapkine

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Abstract

GaInO₃, a layered material with the β Ga₂O ₃ crystal structure, can be doped with electrons through the introduction of oxygen deficiency, Sn doping for In, or Ge doping for Ga. At atomic doping levels of 10% or less, resistivities as low as 3 mΩ cm are obtained. In contrast to polycrystalline indium tin oxide (ITO), which is distinctly green, conductive gallium indium oxide is light grey with no visible coloration. Thin films of doped GaInO₃ display good transparency over the whole optical window, superior to that of ITO in the green-blue region.

Original language	English (US)
Pages (from-to)	2071-2072
Number of pages	2
Journal	Applied Physics Letters
Volume	64
Issue number	16
DOIs	https://doi.org/10.1063/1.111686
State	Published - 1994
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "GaInO3: A new transparent conducting oxide",

abstract = "GaInO3, a layered material with the β Ga2O 3 crystal structure, can be doped with electrons through the introduction of oxygen deficiency, Sn doping for In, or Ge doping for Ga. At atomic doping levels of 10% or less, resistivities as low as 3 mΩ cm are obtained. In contrast to polycrystalline indium tin oxide (ITO), which is distinctly green, conductive gallium indium oxide is light grey with no visible coloration. Thin films of doped GaInO3 display good transparency over the whole optical window, superior to that of ITO in the green-blue region.",

author = "Cava, {R. J.} and Phillips, {Julia M.} and J. Kwo and Thomas, {G. A.} and {Van Dover}, {R. B.} and Carter, {S. A.} and Krajewski, {J. J.} and Peck, {W. F.} and Marshall, {J. H.} and Rapkine, {D. H.}",

year = "1994",

doi = "10.1063/1.111686",

language = "English (US)",

volume = "64",

pages = "2071--2072",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - GaInO3

T2 - A new transparent conducting oxide

AU - Cava, R. J.

AU - Phillips, Julia M.

AU - Kwo, J.

AU - Thomas, G. A.

AU - Van Dover, R. B.

AU - Carter, S. A.

AU - Krajewski, J. J.

AU - Peck, W. F.

AU - Marshall, J. H.

AU - Rapkine, D. H.

PY - 1994

Y1 - 1994

N2 - GaInO3, a layered material with the β Ga2O 3 crystal structure, can be doped with electrons through the introduction of oxygen deficiency, Sn doping for In, or Ge doping for Ga. At atomic doping levels of 10% or less, resistivities as low as 3 mΩ cm are obtained. In contrast to polycrystalline indium tin oxide (ITO), which is distinctly green, conductive gallium indium oxide is light grey with no visible coloration. Thin films of doped GaInO3 display good transparency over the whole optical window, superior to that of ITO in the green-blue region.

AB - GaInO3, a layered material with the β Ga2O 3 crystal structure, can be doped with electrons through the introduction of oxygen deficiency, Sn doping for In, or Ge doping for Ga. At atomic doping levels of 10% or less, resistivities as low as 3 mΩ cm are obtained. In contrast to polycrystalline indium tin oxide (ITO), which is distinctly green, conductive gallium indium oxide is light grey with no visible coloration. Thin films of doped GaInO3 display good transparency over the whole optical window, superior to that of ITO in the green-blue region.

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GaInO₃: A new transparent conducting oxide

Abstract

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