GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3

S. Gautier, C. Sartel, S. Ould-Saad, J. Martin, A. Sirenko, A. Ougazzaden

Research output: Contribution to journalArticlepeer-review

49 Scopus citations

Abstract

Thin films of GaN were grown on template substrates of 4-μm-thick GaN layers on sapphire substrates by low-pressure metal organic vapour-phase epitaxy (LP-MOVPE) in a new-design reactor with the shape T. Wide range of growth temperature from 520 to 1100 °C was explored. At low temperature growth between 550 and 690 °C, dimethylhydrazine (DMHy) was used as source of atomic nitrogen while ammonia (NH3) was used at high temperature growth (1000-1100 °C). At low temperature micro-Raman spectroscopy revealed a significant relaxation of the selection rules for the scattering by the optical phonons in the films grown at lower temperatures. Variation of the intensity ratio for E2H and E1 phonon modes has been attributed to changes in the structural quality of the films grown at different temperatures. At high temperature, the quality of GaN layers were comparable to that of the substrate before growth.

Original languageEnglish (US)
Pages (from-to)428-432
Number of pages5
JournalJournal of Crystal Growth
Volume298
Issue numberSPEC. ISS
DOIs
StatePublished - Jan 2007

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Keywords

  • A1. Micro-Raman spectroscopy
  • A3. Low-temperature epitaxy
  • A3. Metal organic vapour-phase epitaxy
  • A3. New reactor design
  • B2. Gallium nitride

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