GaN materials growth by MOVPE in a new-design reactor using DMHy and NH₃

Keyphrases

• Low Temperature 100%
• Reactor 100%
• Metal Organic Vapor Phase Epitaxy (MOVPE) 100%
• Dimethylhydrazine 100%
• GaN Layers 100%
• GaN Material 100%
• Material Growth 100%
• Low Pressure 50%
• High Temperature 50%
• Intensity Ratio 50%
• Ammonia 50%
• Optical Phonons 50%
• Growth Temperature 50%
• Micro-Raman Spectroscopy 50%
• Selection Rules 50%
• Structural Quality 50%
• Phonon Modes 50%
• Low Temperature Growth 50%
• Sapphire Substrate 50%
• Atomic Nitrogen 50%
• High-temperature Growth 50%

Engineering

• Low-Temperature 100%
• Reactor Design 100%
• Thin Films 50%
• Optical Phonon 50%
• Growth Temperature 50%
• Selection Rule 50%
• Low Growth Temperature 50%
• Sapphire Substrate 50%

Material Science

• Film 100%
• Growth (Materials) 100%
• Thin Films 50%
• Sapphire 50%
• Micro-Raman Spectroscopy 50%
• Vapor Phase Epitaxy 50%