GaN thin films on z- and x-cut LiNbO3 substrates by MOVPE

A. Ougazzaden; T. Moudakir; T. Aggerstam; G. Orsal; J. P. Salvestrini; S. Gautierand; A. A. Sirenko

doi:10.1002/pssc.200778490

GaN thin films on z- and x-cut LiNbO₃ substrates by MOVPE

A. Ougazzaden, T. Moudakir, T. Aggerstam, G. Orsal, J. P. Salvestrini, S. Gautierand, A. A. Sirenko

Physics

Research output: Contribution to journal › Conference article › peer-review

11 Scopus citations

Abstract

We report epitaxial growth of GaN layers on z- and x-cut LiNbO₃ substrates using MOVPE. GaN layers with the thickness of 450 nm were characterized using X-ray diffraction. For both, z- and x-cut orientations of LiNbO₃ substrates, the GaN layers have c-axis orientation normal to the substrate plane and the in-plane lattice orientation of GaN layers coincides with the primary axes of LiNbO₃ substrates. Although GaN layers exhibit almost complete strain relaxation, the residual compressive strain determined with respect to a freestanding GaN is of the order of +0.37% and +0.2% for z- and x-cut substrates, respectively.

Original language	English (US)
Pages (from-to)	1565-1567
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	5
Issue number	6
DOIs	https://doi.org/10.1002/pssc.200778490
State	Published - 2008
Event	7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States Duration: Sep 16 2007 → Sep 21 2007

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1002/pssc.200778490

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title = "GaN thin films on z- and x-cut LiNbO3 substrates by MOVPE",

abstract = "We report epitaxial growth of GaN layers on z- and x-cut LiNbO3 substrates using MOVPE. GaN layers with the thickness of 450 nm were characterized using X-ray diffraction. For both, z- and x-cut orientations of LiNbO3 substrates, the GaN layers have c-axis orientation normal to the substrate plane and the in-plane lattice orientation of GaN layers coincides with the primary axes of LiNbO3 substrates. Although GaN layers exhibit almost complete strain relaxation, the residual compressive strain determined with respect to a freestanding GaN is of the order of +0.37% and +0.2% for z- and x-cut substrates, respectively.",

author = "A. Ougazzaden and T. Moudakir and T. Aggerstam and G. Orsal and Salvestrini, {J. P.} and S. Gautierand and Sirenko, {A. A.}",

year = "2008",

doi = "10.1002/pssc.200778490",

language = "English (US)",

volume = "5",

pages = "1565--1567",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "6",

note = "7th International Conference of Nitride Semiconductors, ICNS-7 ; Conference date: 16-09-2007 Through 21-09-2007",

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TY - JOUR

T1 - GaN thin films on z- and x-cut LiNbO3 substrates by MOVPE

AU - Ougazzaden, A.

AU - Moudakir, T.

AU - Aggerstam, T.

AU - Orsal, G.

AU - Salvestrini, J. P.

AU - Gautierand, S.

AU - Sirenko, A. A.

PY - 2008

Y1 - 2008

N2 - We report epitaxial growth of GaN layers on z- and x-cut LiNbO3 substrates using MOVPE. GaN layers with the thickness of 450 nm were characterized using X-ray diffraction. For both, z- and x-cut orientations of LiNbO3 substrates, the GaN layers have c-axis orientation normal to the substrate plane and the in-plane lattice orientation of GaN layers coincides with the primary axes of LiNbO3 substrates. Although GaN layers exhibit almost complete strain relaxation, the residual compressive strain determined with respect to a freestanding GaN is of the order of +0.37% and +0.2% for z- and x-cut substrates, respectively.

AB - We report epitaxial growth of GaN layers on z- and x-cut LiNbO3 substrates using MOVPE. GaN layers with the thickness of 450 nm were characterized using X-ray diffraction. For both, z- and x-cut orientations of LiNbO3 substrates, the GaN layers have c-axis orientation normal to the substrate plane and the in-plane lattice orientation of GaN layers coincides with the primary axes of LiNbO3 substrates. Although GaN layers exhibit almost complete strain relaxation, the residual compressive strain determined with respect to a freestanding GaN is of the order of +0.37% and +0.2% for z- and x-cut substrates, respectively.

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U2 - 10.1002/pssc.200778490

DO - 10.1002/pssc.200778490

M3 - Conference article

AN - SCOPUS:50849143992

SN - 1862-6351

VL - 5

SP - 1565

EP - 1567

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 6

T2 - 7th International Conference of Nitride Semiconductors, ICNS-7

Y2 - 16 September 2007 through 21 September 2007

ER -

GaN thin films on z- and x-cut LiNbO₃ substrates by MOVPE

Abstract

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