GaN thin films on z- and x-cut LiNbO3 substrates by MOVPE

A. Ougazzaden, T. Moudakir, T. Aggerstam, G. Orsal, J. P. Salvestrini, S. Gautierand, A. A. Sirenko

Research output: Contribution to journalConference articlepeer-review

10 Scopus citations

Abstract

We report epitaxial growth of GaN layers on z- and x-cut LiNbO3 substrates using MOVPE. GaN layers with the thickness of 450 nm were characterized using X-ray diffraction. For both, z- and x-cut orientations of LiNbO3 substrates, the GaN layers have c-axis orientation normal to the substrate plane and the in-plane lattice orientation of GaN layers coincides with the primary axes of LiNbO3 substrates. Although GaN layers exhibit almost complete strain relaxation, the residual compressive strain determined with respect to a freestanding GaN is of the order of +0.37% and +0.2% for z- and x-cut substrates, respectively.

Original languageEnglish (US)
Pages (from-to)1565-1567
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number6
DOIs
StatePublished - Dec 1 2008
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: Sep 16 2007Sep 21 2007

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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