Field effect transistors were fabricated using carbon nanotube (CNT) intra-connnects. The intra-connects - individual tube or a small bundle of tubes spanning across the planar electrodes - were grown by using chemical vapor deposition (CVD) precisely between very sharp metal tips on the pre-fabricated electrodes. Gate-controlled N-shaped negative differential resistance (NDR) has been demonstrated. Enhanced differential photoconductance, which was associated with NDR was observed, as well.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering