Gate electrode effects on low-frequency (1/f) noise in p-MOSFETs with high-κ dielectrics

Keyphrases

• High-k Dielectric 100%
• PMOSFET 100%
• Gate Electrode 100%
• Electrode Effect 100%
• Oxides 50%
• Drain Current 50%
• Gate Dielectric Layer 50%
• Specific Behavior 25%
• Noise Level 25%
• Tunneling 25%
• MOSFET 25%
• Oxygen Vacancy 25%
• Gate Material 25%
• Noise Performance 25%
• Gate Dielectric 25%
• Poly-Si 25%
• Dielectric Layer 25%
• Oxygen Concentration 25%
• Bulk Layer 25%
• Dielectric Interface 25%
• Vacancy Defects 25%
• Trap Profile 25%
• Current Spectrum 25%

Engineering

• Dielectrics 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Gate Electrode 100%
• Gate Dielectric 75%
• Dielectric Layer 75%
• Related Defect 50%
• Current Drain 50%
• Noise Level 25%
• Tunnel Construction 25%
• Oxygen Vacancy 25%
• Noise Performance 25%
• Bulk Layer 25%

Material Science

• Dielectric Material 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Oxide Compound 33%
• Oxygen Vacancy 16%