Gate oxides grown on deuterium-implanted silicon substrate

D. Misra, S. Kishore

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Thin oxides (4 nm) grown on deuterium-implanted silicon substrates were investigated for the first time. It was observed that deuterium implantation at a light dose of 1×1014/cm2 at 25 keV significantly reduced the leakage current through the oxide. A reduction in electron trap density has also been observed for this oxide. An increase in leakage current, observed for both higher and lower energy deuterium implants, was possibly because of enhanced substrate damage and out-diffusion of deuterium, respectively. Deuterium-implanted oxide, subjected to N2O annealing, showed further improvement in electrical characteristics.

Original languageEnglish (US)
Pages (from-to)637-639
Number of pages3
JournalElectrochemical and Solid-State Letters
Issue number12
StatePublished - Dec 1999

All Science Journal Classification (ASJC) codes

  • General Chemical Engineering
  • General Materials Science
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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