Gate oxides grown on deuterium-implanted silicon substrate

Thin oxides (4 nm) grown on deuterium-implanted silicon substrates were investigated for the first time. It was observed that deuterium implantation at a light dose of 1×10¹⁴/cm² at 25 keV significantly reduced the leakage current through the oxide. A reduction in electron trap density has also been observed for this oxide. An increase in leakage current, observed for both higher and lower energy deuterium implants, was possibly because of enhanced substrate damage and out-diffusion of deuterium, respectively. Deuterium-implanted oxide, subjected to N₂O annealing, showed further improvement in electrical characteristics.