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Gate oxides grown on deuterium-implanted silicon substrate
D. Misra
, S. Kishore
Electrical and Computer Engineering
Research output
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Contribution to journal
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Article
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peer-review
2
Scopus citations
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Dive into the research topics of 'Gate oxides grown on deuterium-implanted silicon substrate'. Together they form a unique fingerprint.
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Keyphrases
Silicon Substrate
100%
Deuterium
100%
Gate Oxide
100%
Implanted Silicon
100%
Oxides
60%
Leakage Current
40%
High Energy
20%
Low Energy
20%
Electrical Characteristics
20%
Electron Traps
20%
Trap Density
20%
Light Dose
20%
Thin Oxides
20%
Deuterium Implantation
20%
Out-diffusion
20%
N2O Annealing
20%
Material Science
Silicon
100%
Oxide Compound
100%
Deuterium
100%
Density
16%
Annealing
16%
Electrical Property
16%
Chemistry
Silicon
100%
Deuterium(.)
100%
Leakage Current
33%
Nitrous Oxide
16%
Trap Density Measurement
16%
Electron Trap
16%
Engineering
Silicon Substrate
100%
Gate Oxide
100%
Electron Trap
50%
Chemical Engineering
Deuterium
100%