Gate oxides grown on deuterium-implanted silicon substrate

Engineering & Materials Science

• Deuterium 100%
• Oxides 59%
• Silicon 54%
• Substrates 49%
• Leakage currents 37%
• Electron traps 32%
• Heavy water 25%
• Dosimetry 21%
• Annealing 17%

Chemical Compounds

• Deuterium(.) 47%
• Leakage Current 45%
• Oxide 37%
• Trap Density Measurement 26%
• Electron Trap 24%
• Implant 17%
• Annealing 13%
• Dose 13%
• Energy 8%
• Reduction 7%

Physics & Astronomy

• deuterium 64%
• oxides 43%
• silicon 37%
• leakage 22%
• implantation 12%
• traps 10%
• damage 9%
• dosage 9%
• annealing 8%
• electrons 5%
• energy 4%