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Ge MOS capacitors with thermally evaporated Hf O2 as gate dielectric
R. Garg,
D. Misra
, P. K. Swain
Electrical and Computer Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
16
Scopus citations
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Engineering & Materials Science
Annealing
41%
Capacitance
12%
Capacitors
55%
Chemical analysis
9%
Crystalline materials
14%
Current density
27%
Electric potential
14%
Gate dielectrics
100%
Germanium
18%
Hafnium oxides
24%
Hysteresis
26%
Interface states
21%
Leakage currents
30%
Metals
45%
Oxide semiconductors
83%
Oxides
12%
Scanning electron microscopy
11%
Substrates
9%
Surface roughness
11%
Temperature
5%
X ray diffraction
13%
X ray photoelectron spectroscopy
17%
Chemical Compounds
Annealing
33%
Capacitor
72%
Conductance
13%
Current Density
20%
Dielectric Material
61%
Hafnium Atom
16%
Hysteresis
27%
Interface State
21%
Leakage Current
36%
Liquid Film
33%
Oxide
15%
Scanning Electron Microscopy
8%
Semiconductor
53%
Surface Roughness
14%
X-Ray Diffraction
6%
X-Ray Photoelectron Spectroscopy
9%