Ge MOS capacitors with thermally evaporated Hf O2 as gate dielectric

Engineering & Materials Science

• Annealing 41%
• Capacitance 12%
• Capacitors 55%
• Chemical analysis 9%
• Crystalline materials 14%
• Current density 27%
• Electric potential 14%
• Gate dielectrics 100%
• Germanium 18%
• Hafnium oxides 24%
• Hysteresis 26%
• Interface states 21%
• Leakage currents 30%
• Metals 45%
• Oxide semiconductors 83%
• Oxides 12%
• Scanning electron microscopy 11%
• Substrates 9%
• Surface roughness 11%
• Temperature 5%
• X ray diffraction 13%
• X ray photoelectron spectroscopy 17%

Chemical Compounds

• Annealing 33%
• Capacitor 72%
• Conductance 13%
• Current Density 20%
• Dielectric Material 61%
• Hafnium Atom 16%
• Hysteresis 27%
• Interface State 21%
• Leakage Current 36%
• Liquid Film 33%
• Oxide 15%
• Scanning Electron Microscopy 8%
• Semiconductor 53%
• Surface Roughness 14%
• X-Ray Diffraction 6%
• X-Ray Photoelectron Spectroscopy 9%