GE MOS devices with thermally evaporated HFO2 as gate dielectric

R. Garg, D. Misra, P. K. Swain

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated the impact of thermally evaporated hafnium oxide (HfO2) films on germanium substrates. Surface roughness of the HfO2 film was studied by scanning electron microscopy. Presence of crystalline GeO2 was evident from XRD results on as deposited films. Capacitance-voltage (C-V) and current-voltage (I-V) measurements of the as deposited MOS capacitors demonstrated a hysteresis of 2.3V and leakage current density of 10Amp/cm2 at IV respectively. Annealing of these films at two different temperatures of 500°C and 550°C in N2 ambience reduced the hysteresis to 0.9V and the leakage current density by five orders of magnitude. Observed increment of EOT after annealing indicates further growth of interfacial layer. Interface state density, estimated using conductance method after 550°C annealing, was 5.1×1012 cm -2eV-1.

Original languageEnglish (US)
Title of host publicationDielectrics in Emerging Technologies -and- Persistent Phosphors, Joint Proceedings of the International Symposia
Pages46-59
Number of pages14
StatePublished - 2006
EventDielectrics in Emerging Technologies -and- Persistent Phosphors - International Symposia - Quebec City, QC, Canada
Duration: May 15 2005May 20 2005

Publication series

NameProceedings - Electrochemical Society
VolumePV 2005-13

Other

OtherDielectrics in Emerging Technologies -and- Persistent Phosphors - International Symposia
Country/TerritoryCanada
CityQuebec City, QC
Period5/15/055/20/05

All Science Journal Classification (ASJC) codes

  • Electrochemistry

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