TY - GEN
T1 - GE MOS devices with thermally evaporated HFO2 as gate dielectric
AU - Garg, R.
AU - Misra, D.
AU - Swain, P. K.
PY - 2006
Y1 - 2006
N2 - We have investigated the impact of thermally evaporated hafnium oxide (HfO2) films on germanium substrates. Surface roughness of the HfO2 film was studied by scanning electron microscopy. Presence of crystalline GeO2 was evident from XRD results on as deposited films. Capacitance-voltage (C-V) and current-voltage (I-V) measurements of the as deposited MOS capacitors demonstrated a hysteresis of 2.3V and leakage current density of 10Amp/cm2 at IV respectively. Annealing of these films at two different temperatures of 500°C and 550°C in N2 ambience reduced the hysteresis to 0.9V and the leakage current density by five orders of magnitude. Observed increment of EOT after annealing indicates further growth of interfacial layer. Interface state density, estimated using conductance method after 550°C annealing, was 5.1×1012 cm -2eV-1.
AB - We have investigated the impact of thermally evaporated hafnium oxide (HfO2) films on germanium substrates. Surface roughness of the HfO2 film was studied by scanning electron microscopy. Presence of crystalline GeO2 was evident from XRD results on as deposited films. Capacitance-voltage (C-V) and current-voltage (I-V) measurements of the as deposited MOS capacitors demonstrated a hysteresis of 2.3V and leakage current density of 10Amp/cm2 at IV respectively. Annealing of these films at two different temperatures of 500°C and 550°C in N2 ambience reduced the hysteresis to 0.9V and the leakage current density by five orders of magnitude. Observed increment of EOT after annealing indicates further growth of interfacial layer. Interface state density, estimated using conductance method after 550°C annealing, was 5.1×1012 cm -2eV-1.
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M3 - Conference contribution
AN - SCOPUS:52649089184
SN - 1566775116
SN - 9781566775113
T3 - Proceedings - Electrochemical Society
SP - 46
EP - 59
BT - Dielectrics in Emerging Technologies -and- Persistent Phosphors, Joint Proceedings of the International Symposia
T2 - Dielectrics in Emerging Technologies -and- Persistent Phosphors - International Symposia
Y2 - 15 May 2005 through 20 May 2005
ER -