GE MOS devices with thermally evaporated HFO2 as gate dielectric

R. Garg; D. Misra; P. K. Swain

GE MOS devices with thermally evaporated HFO₂ as gate dielectric

R. Garg
, D. Misra
, P. K. Swain

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have investigated the impact of thermally evaporated hafnium oxide (HfO₂) films on germanium substrates. Surface roughness of the HfO₂ film was studied by scanning electron microscopy. Presence of crystalline GeO₂ was evident from XRD results on as deposited films. Capacitance-voltage (C-V) and current-voltage (I-V) measurements of the as deposited MOS capacitors demonstrated a hysteresis of 2.3V and leakage current density of 10Amp/cm² at IV respectively. Annealing of these films at two different temperatures of 500°C and 550°C in N₂ ambience reduced the hysteresis to 0.9V and the leakage current density by five orders of magnitude. Observed increment of EOT after annealing indicates further growth of interfacial layer. Interface state density, estimated using conductance method after 550°C annealing, was 5.1×10¹² cm ^-2eV^-1.

Original language	English (US)
Title of host publication	Dielectrics in Emerging Technologies -and- Persistent Phosphors, Joint Proceedings of the International Symposia
Pages	46-59
Number of pages	14
State	Published - 2006
Event	Dielectrics in Emerging Technologies -and- Persistent Phosphors - International Symposia - Quebec City, QC, Canada Duration: May 15 2005 → May 20 2005

Publication series

Name	Proceedings - Electrochemical Society
Volume	PV 2005-13

Other

Other	Dielectrics in Emerging Technologies -and- Persistent Phosphors - International Symposia
Country/Territory	Canada
City	Quebec City, QC
Period	5/15/05 → 5/20/05

All Science Journal Classification (ASJC) codes

Electrochemistry

Cite this

@inproceedings{dff15af8ae3d40e7866b63a09946befc,

title = "GE MOS devices with thermally evaporated HFO2 as gate dielectric",

abstract = "We have investigated the impact of thermally evaporated hafnium oxide (HfO2) films on germanium substrates. Surface roughness of the HfO2 film was studied by scanning electron microscopy. Presence of crystalline GeO2 was evident from XRD results on as deposited films. Capacitance-voltage (C-V) and current-voltage (I-V) measurements of the as deposited MOS capacitors demonstrated a hysteresis of 2.3V and leakage current density of 10Amp/cm2 at IV respectively. Annealing of these films at two different temperatures of 500°C and 550°C in N2 ambience reduced the hysteresis to 0.9V and the leakage current density by five orders of magnitude. Observed increment of EOT after annealing indicates further growth of interfacial layer. Interface state density, estimated using conductance method after 550°C annealing, was 5.1×1012 cm -2eV-1.",

author = "R. Garg and D. Misra and Swain, \{P. K.\}",

year = "2006",

language = "English (US)",

isbn = "1566775116",

series = "Proceedings - Electrochemical Society",

pages = "46--59",

booktitle = "Dielectrics in Emerging Technologies -and- Persistent Phosphors, Joint Proceedings of the International Symposia",

note = "Dielectrics in Emerging Technologies -and- Persistent Phosphors - International Symposia ; Conference date: 15-05-2005 Through 20-05-2005",

}

Garg, R, Misra, D & Swain, PK 2006, GE MOS devices with thermally evaporated HFO₂ as gate dielectric. in Dielectrics in Emerging Technologies -and- Persistent Phosphors, Joint Proceedings of the International Symposia. Proceedings - Electrochemical Society, vol. PV 2005-13, pp. 46-59, Dielectrics in Emerging Technologies -and- Persistent Phosphors - International Symposia, Quebec City, QC, Canada, 5/15/05.

GE MOS devices with thermally evaporated HFO₂ as gate dielectric. / Garg, R.; Misra, D.; Swain, P. K.
Dielectrics in Emerging Technologies -and- Persistent Phosphors, Joint Proceedings of the International Symposia. 2006. p. 46-59 (Proceedings - Electrochemical Society; Vol. PV 2005-13).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - GE MOS devices with thermally evaporated HFO2 as gate dielectric

AU - Garg, R.

AU - Misra, D.

AU - Swain, P. K.

PY - 2006

Y1 - 2006

N2 - We have investigated the impact of thermally evaporated hafnium oxide (HfO2) films on germanium substrates. Surface roughness of the HfO2 film was studied by scanning electron microscopy. Presence of crystalline GeO2 was evident from XRD results on as deposited films. Capacitance-voltage (C-V) and current-voltage (I-V) measurements of the as deposited MOS capacitors demonstrated a hysteresis of 2.3V and leakage current density of 10Amp/cm2 at IV respectively. Annealing of these films at two different temperatures of 500°C and 550°C in N2 ambience reduced the hysteresis to 0.9V and the leakage current density by five orders of magnitude. Observed increment of EOT after annealing indicates further growth of interfacial layer. Interface state density, estimated using conductance method after 550°C annealing, was 5.1×1012 cm -2eV-1.

AB - We have investigated the impact of thermally evaporated hafnium oxide (HfO2) films on germanium substrates. Surface roughness of the HfO2 film was studied by scanning electron microscopy. Presence of crystalline GeO2 was evident from XRD results on as deposited films. Capacitance-voltage (C-V) and current-voltage (I-V) measurements of the as deposited MOS capacitors demonstrated a hysteresis of 2.3V and leakage current density of 10Amp/cm2 at IV respectively. Annealing of these films at two different temperatures of 500°C and 550°C in N2 ambience reduced the hysteresis to 0.9V and the leakage current density by five orders of magnitude. Observed increment of EOT after annealing indicates further growth of interfacial layer. Interface state density, estimated using conductance method after 550°C annealing, was 5.1×1012 cm -2eV-1.

UR - https://www.scopus.com/pages/publications/52649089184

UR - https://www.scopus.com/pages/publications/52649089184#tab=citedBy

M3 - Conference contribution

AN - SCOPUS:52649089184

SN - 1566775116

SN - 9781566775113

T3 - Proceedings - Electrochemical Society

SP - 46

EP - 59

BT - Dielectrics in Emerging Technologies -and- Persistent Phosphors, Joint Proceedings of the International Symposia

T2 - Dielectrics in Emerging Technologies -and- Persistent Phosphors - International Symposia

Y2 - 15 May 2005 through 20 May 2005

ER -