GE MOS devices with thermally evaporated HFO₂ as gate dielectric

Engineering & Materials Science

• Annealing 69%
• Capacitance 20%
• Crystalline materials 24%
• Current density 45%
• Electric potential 24%
• Gate dielectrics 100%
• Germanium 31%
• Hafnium oxides 41%
• Hysteresis 44%
• Interface states 35%
• Leakage currents 50%
• MOS capacitors 36%
• MOS devices 97%
• Oxide films 29%
• Scanning electron microscopy 18%
• Substrates 16%
• Surface roughness 19%
• Temperature 9%

Chemical Compounds

• Annealing 41%
• Capacitor 18%
• Conductance 16%
• Current Density 25%
• Dielectric Material 61%
• Hafnium Atom 21%
• Hysteresis 34%
• Interface State 27%
• Leakage Current 46%
• Liquid Film 33%
• Oxide 9%
• Scanning Electron Microscopy 10%
• Surface Roughness 17%