Grain enhancement of thin silicon layers using optical processing

B. L. Sopori, Jeff Alleman, W. Chen, T. Y. Tan, N. M. Ravindra

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

We describe a new technique for producing large-grain, poly-Si thin films on low-cost glass substrates for solar cell applications. A layer of fine-grain poly-Si is deposited on metal-coated substrate followed by a grain enhancement using optical/thermal annealing at low temperatures (approximately 500 °C). The results show that in thin-layer silicon, less than 3 microns, grains can be formed in a short time (few minutes) with grain sizes larger than the film thickness. The possible mechanisms involved in this process are also presented.

Original languageEnglish (US)
Pages (from-to)419-424
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume470
DOIs
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 1 1997Apr 4 1997

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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