Grain enhancement of thin silicon layers using optical processing

B. L. Sopori; Jeff Alleman; W. Chen; T. Y. Tan; N. M. Ravindra

doi:10.1557/proc-470-419

Grain enhancement of thin silicon layers using optical processing

B. L. Sopori, Jeff Alleman, W. Chen, T. Y. Tan, N. M. Ravindra

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

We describe a new technique for producing large-grain, poly-Si thin films on low-cost glass substrates for solar cell applications. A layer of fine-grain poly-Si is deposited on metal-coated substrate followed by a grain enhancement using optical/thermal annealing at low temperatures (approximately 500 °C). The results show that in thin-layer silicon, less than 3 microns, grains can be formed in a short time (few minutes) with grain sizes larger than the film thickness. The possible mechanisms involved in this process are also presented.

Original language	English (US)
Pages (from-to)	419-424
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	470
DOIs	https://doi.org/10.1557/proc-470-419
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 1 1997 → Apr 4 1997

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{2765ff86f06640719dcb25545107265c,

title = "Grain enhancement of thin silicon layers using optical processing",

abstract = "We describe a new technique for producing large-grain, poly-Si thin films on low-cost glass substrates for solar cell applications. A layer of fine-grain poly-Si is deposited on metal-coated substrate followed by a grain enhancement using optical/thermal annealing at low temperatures (approximately 500 °C). The results show that in thin-layer silicon, less than 3 microns, grains can be formed in a short time (few minutes) with grain sizes larger than the film thickness. The possible mechanisms involved in this process are also presented.",

author = "Sopori, {B. L.} and Jeff Alleman and W. Chen and Tan, {T. Y.} and Ravindra, {N. M.}",

year = "1997",

doi = "10.1557/proc-470-419",

language = "English (US)",

volume = "470",

pages = "419--424",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Spring Meeting ; Conference date: 01-04-1997 Through 04-04-1997",

}

TY - JOUR

T1 - Grain enhancement of thin silicon layers using optical processing

AU - Sopori, B. L.

AU - Alleman, Jeff

AU - Chen, W.

AU - Tan, T. Y.

AU - Ravindra, N. M.

PY - 1997

Y1 - 1997

N2 - We describe a new technique for producing large-grain, poly-Si thin films on low-cost glass substrates for solar cell applications. A layer of fine-grain poly-Si is deposited on metal-coated substrate followed by a grain enhancement using optical/thermal annealing at low temperatures (approximately 500 °C). The results show that in thin-layer silicon, less than 3 microns, grains can be formed in a short time (few minutes) with grain sizes larger than the film thickness. The possible mechanisms involved in this process are also presented.

AB - We describe a new technique for producing large-grain, poly-Si thin films on low-cost glass substrates for solar cell applications. A layer of fine-grain poly-Si is deposited on metal-coated substrate followed by a grain enhancement using optical/thermal annealing at low temperatures (approximately 500 °C). The results show that in thin-layer silicon, less than 3 microns, grains can be formed in a short time (few minutes) with grain sizes larger than the film thickness. The possible mechanisms involved in this process are also presented.

UR - http://www.scopus.com/inward/record.url?scp=0031354051&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031354051&partnerID=8YFLogxK

U2 - 10.1557/proc-470-419

DO - 10.1557/proc-470-419

M3 - Conference article

AN - SCOPUS:0031354051

SN - 0272-9172

VL - 470

SP - 419

EP - 424

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Spring Meeting

Y2 - 1 April 1997 through 4 April 1997

ER -

Grain enhancement of thin silicon layers using optical processing

Abstract

All Science Journal Classification (ASJC) codes

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