Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices

Hieu P.T. Nguyen

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy was demystified.

Original languageEnglish (US)
Article number164
JournalLight: Science and Applications
Volume11
Issue number1
DOIs
StatePublished - Dec 2022

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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