Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices

Hieu P.T. Nguyen

doi:10.1038/s41377-022-00861-1

Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices

Hieu P.T. Nguyen

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy was demystified.

Original language	English (US)
Article number	164
Journal	Light: Science and Applications
Volume	11
Issue number	1
DOIs	https://doi.org/10.1038/s41377-022-00861-1
State	Published - Dec 2022

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Access to Document

10.1038/s41377-022-00861-1

Cite this

@article{0fb8784797334d72b0495e6786f7df57,

title = "Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices",

abstract = "Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy was demystified.",

author = "Nguyen, {Hieu P.T.}",

note = "Publisher Copyright: {\textcopyright} 2022, The Author(s).",

year = "2022",

month = dec,

doi = "10.1038/s41377-022-00861-1",

language = "English (US)",

volume = "11",

journal = "Light: Science and Applications",

issn = "2047-7538",

publisher = "Nature Publishing Group",

number = "1",

}

TY - JOUR

T1 - Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices

AU - Nguyen, Hieu P.T.

PY - 2022/12

Y1 - 2022/12

N2 - Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy was demystified.

AB - Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy was demystified.

UR - http://www.scopus.com/inward/record.url?scp=85131521724&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85131521724&partnerID=8YFLogxK

U2 - 10.1038/s41377-022-00861-1

DO - 10.1038/s41377-022-00861-1

M3 - Article

AN - SCOPUS:85131521724

SN - 2047-7538

VL - 11

JO - Light: Science and Applications

JF - Light: Science and Applications

IS - 1

M1 - 164

ER -

Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this