Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices

Hieu P.T. Nguyen

doi:10.1038/s41377-022-00861-1

Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices

Hieu P.T. Nguyen

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy was demystified.

Original language	English (US)
Article number	164
Journal	Light: Science and Applications
Volume	11
Issue number	1
DOIs	https://doi.org/10.1038/s41377-022-00861-1
State	Published - Dec 2022

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

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10.1038/s41377-022-00861-1

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title = "Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices",

abstract = "Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy was demystified.",

author = "Nguyen, \{Hieu P.T.\}",

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year = "2022",

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doi = "10.1038/s41377-022-00861-1",

language = "English (US)",

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AU - Nguyen, Hieu P.T.

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AB - Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy was demystified.

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JF - Light: Science and Applications

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Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices

Abstract

All Science Journal Classification (ASJC) codes

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