Growth kinetics and characterization of low pressure chemically vapor deposited Si₃N₄ films from (C₄H₉)₂SiH₂ and NH₃

Keyphrases

• Low Pressure 100%
• Growth Rate 100%
• Silicon Nitride 100%
• Growth Kinetics 100%
• Deposition Temperature 100%
• Growth Characterization 100%
• High Temperature 33%
• Temperature Range 33%
• Low Pressure Chemical Vapor Deposition (LPCVD) 33%
• Environmentally Benign 33%
• Young's Modulus 33%
• Refractive Index 33%
• Activation Energy 33%
• Surface Sites 33%
• Total Pressure 33%
• Arrhenius Behavior 33%
• Partial Pressure 33%
• Silicon Nitride Film 33%
• FTIR Spectra 33%
• Gas-phase Decomposition 33%
• Langmuir-Hinshelwood Mechanism 33%
• C-value 33%

Engineering

• Deposition Temperature 100%
• Growth Kinetics 100%
• Refractive Index 33%
• Gas-Phase 33%
• Chemical Vapor Deposition 33%
• Vapor Deposition 33%
• Temperature Range 33%
• Flow Rate 33%
• Nitride 33%
• Young's Modulus 33%
• Activation Energy 33%
• Partial Pressure 33%
• Mols 33%
• Surface Site 33%
• Tensiles 33%
• Arrhenius 33%
• Torr 33%
• Langmuir-Hinshelwood Mechanism 33%

Material Science

• Film 100%
• Silicon Nitride 100%
• Low Pressure Chemical Vapor Deposition 25%
• Amorphous Material 25%
• Young's Modulus 25%
• Activation Energy 25%
• Refractive Index 25%