Growth mode and initial stage schottky barrier formation at the in/gaas interface: A photoemission study

Renyu Cao, Ken Miyano, K. Ken Chin, Ingolf Lindau, William E. Spicer

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The In growth on cleaved GaAs(l 10) surfaces at room temperature (RT) and 80 K low temperature (LT) as well as the initial stage Schottky barrier formation at this interface has been studied using photoelectron spectroscopy. In grows as 3-D islands at RT, but in Stanski-Krastanov mode at LT. The size of the clusters has been estimated through an intensity study. The In core level spectra continuously shifts to high binding energy direction in the transformation from isolated atoms to bulk metal. The Fermi level pinning pattern shows a strong temperature dependence, which challenges current models of Schottky barrier formation at metal/semiconductor interfaces.

Original languageEnglish (US)
Pages (from-to)219-226
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume946
DOIs
StatePublished - Aug 9 1988
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Growth mode and initial stage schottky barrier formation at the in/gaas interface: A photoemission study'. Together they form a unique fingerprint.

Cite this