Growth mode and initial stage schottky barrier formation at the in/gaas interface: A photoemission study

Renyu Cao; Ken Miyano; K. Ken Chin; Ingolf Lindau; William E. Spicer

doi:10.1117/12.947434

Growth mode and initial stage schottky barrier formation at the in/gaas interface: A photoemission study

Renyu Cao, Ken Miyano, K. Ken Chin, Ingolf Lindau, William E. Spicer

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5 Scopus citations

Abstract

The In growth on cleaved GaAs(l 10) surfaces at room temperature (RT) and 80 K low temperature (LT) as well as the initial stage Schottky barrier formation at this interface has been studied using photoelectron spectroscopy. In grows as 3-D islands at RT, but in Stanski-Krastanov mode at LT. The size of the clusters has been estimated through an intensity study. The In core level spectra continuously shifts to high binding energy direction in the transformation from isolated atoms to bulk metal. The Fermi level pinning pattern shows a strong temperature dependence, which challenges current models of Schottky barrier formation at metal/semiconductor interfaces.

Original language	English (US)
Pages (from-to)	219-226
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	946
DOIs	https://doi.org/10.1117/12.947434
State	Published - Aug 9 1988
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Growth mode and initial stage schottky barrier formation at the in/gaas interface: A photoemission study",

abstract = "The In growth on cleaved GaAs(l 10) surfaces at room temperature (RT) and 80 K low temperature (LT) as well as the initial stage Schottky barrier formation at this interface has been studied using photoelectron spectroscopy. In grows as 3-D islands at RT, but in Stanski-Krastanov mode at LT. The size of the clusters has been estimated through an intensity study. The In core level spectra continuously shifts to high binding energy direction in the transformation from isolated atoms to bulk metal. The Fermi level pinning pattern shows a strong temperature dependence, which challenges current models of Schottky barrier formation at metal/semiconductor interfaces.",

author = "Renyu Cao and Ken Miyano and Chin, {K. Ken} and Ingolf Lindau and Spicer, {William E.}",

note = "Funding Information: This work is supported by ONR under contract No. N00014-86-0736. Fruitful discussions with Dr. T. Kendelewicz are gratefully acknoledged.",

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doi = "10.1117/12.947434",

language = "English (US)",

volume = "946",

pages = "219--226",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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T1 - Growth mode and initial stage schottky barrier formation at the in/gaas interface

T2 - A photoemission study

AU - Cao, Renyu

AU - Miyano, Ken

AU - Chin, K. Ken

AU - Lindau, Ingolf

AU - Spicer, William E.

N1 - Funding Information: This work is supported by ONR under contract No. N00014-86-0736. Fruitful discussions with Dr. T. Kendelewicz are gratefully acknoledged.

PY - 1988/8/9

Y1 - 1988/8/9

N2 - The In growth on cleaved GaAs(l 10) surfaces at room temperature (RT) and 80 K low temperature (LT) as well as the initial stage Schottky barrier formation at this interface has been studied using photoelectron spectroscopy. In grows as 3-D islands at RT, but in Stanski-Krastanov mode at LT. The size of the clusters has been estimated through an intensity study. The In core level spectra continuously shifts to high binding energy direction in the transformation from isolated atoms to bulk metal. The Fermi level pinning pattern shows a strong temperature dependence, which challenges current models of Schottky barrier formation at metal/semiconductor interfaces.

AB - The In growth on cleaved GaAs(l 10) surfaces at room temperature (RT) and 80 K low temperature (LT) as well as the initial stage Schottky barrier formation at this interface has been studied using photoelectron spectroscopy. In grows as 3-D islands at RT, but in Stanski-Krastanov mode at LT. The size of the clusters has been estimated through an intensity study. The In core level spectra continuously shifts to high binding energy direction in the transformation from isolated atoms to bulk metal. The Fermi level pinning pattern shows a strong temperature dependence, which challenges current models of Schottky barrier formation at metal/semiconductor interfaces.

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JF - Proceedings of SPIE - The International Society for Optical Engineering

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Growth mode and initial stage schottky barrier formation at the in/gaas interface: A photoemission study

Abstract

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