Keyphrases
Gallium Arsenide
100%
Schottky Barrier
100%
Photoemission
100%
Growth Form
100%
Barrier Formation
100%
Low Temperature
66%
Room Temperature
66%
Temperature Effect
33%
As(III)
33%
Photoelectron Spectroscopy
33%
Metal-semiconductor Contact
33%
Isolated Atoms
33%
Binding Energy
33%
Bulk Metal
33%
Core Level
33%
Fermi Level pinning
33%
Engineering
Initial Stage
100%
Schottky Barrier
100%
Growth Mode
100%
Photoemission
100%
Room Temperature
66%
Low-Temperature
66%
Temperature Dependence
33%
Gallium Arsenide
33%
Photoelectron
33%
Fermi Level
33%
Core Level
33%
Binding Energy
33%
Chemistry
Photoemission
100%
Schottky Contact
100%
Ambient Reaction Temperature
66%
Core Level
33%
Binding Energy
33%
Photoelectron Spectroscopy
33%
Fermi Level
33%
Material Science
Schottky Barrier
100%
Photoemission Spectroscopy
33%
Gallium Arsenide
33%