Keyphrases
As(III)
33%
Barrier Formation
100%
Binding Energy
33%
Bulk Metal
33%
Core Level
33%
Fermi Level pinning
33%
Gallium Arsenide
100%
Growth Form
100%
Isolated Atoms
33%
Low Temperature
66%
Metal-semiconductor Contact
33%
Photoelectron Spectroscopy
33%
Photoemission
100%
Room Temperature
66%
Schottky Barrier
100%
Temperature Effect
33%
Engineering
Binding Energy
33%
Core Level
33%
Fermi Level
33%
Gallium Arsenide
33%
Growth Mode
100%
Initial Stage
100%
Low-Temperature
66%
Photoelectron
33%
Photoemission
100%
Room Temperature
66%
Schottky Barrier
100%
Temperature Dependence
33%
Chemistry
Ambient Reaction Temperature
66%
Binding Energy
33%
Core Level
33%
Fermi Level
33%
Photoelectron Spectroscopy
33%
Photoemission
100%
Schottky Contact
100%
Material Science
Gallium Arsenide
33%
Photoemission Spectroscopy
33%
Schottky Barrier
100%