Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiOx by catalyst-free molecular beam epitaxy

S. Zhao, M. G. Kibria, Q. Wang, H. P.T. Nguyen, Z. Mi

Research output: Contribution to journalArticlepeer-review

73 Scopus citations

Abstract

The catalyst-free molecular beam epitaxial growth of GaN nanowires and their heterostructures on a SiOx template is studied in detail. It was found that by optimizing the growth temperature, highly uniform and vertically aligned GaN nanowires and InGaN/GaN heterostructures with excellent optical properties can be obtained on a SiOx template in a large-scale. This work provides an entirely new avenue for GaN nanowire based optoelectronic devices.

Original languageEnglish (US)
Pages (from-to)5283-5287
Number of pages5
JournalNanoscale
Volume5
Issue number12
DOIs
StatePublished - Jun 21 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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