HgCdTe photodiodes-A device study

Fei Ming Tong, Yuan Haoxin, Yang Xiuzhen, N. M. Ravindra

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Recent developments in HgCdTe photovoltaic detector technology are reviewed. Some aspects of research work on device physics and technology are discussed. These include: the performance of HgCdTe photodiodes for IR fiber communication; the effects of field-enhanced generation-recombination and imperfections of the pn junction on HgCdTe photodiode I-V characteristics; and an analysis of the dependence of energy gap of HgCdTe on temperature and composition.

Original languageEnglish (US)
Pages (from-to)511-522
Number of pages12
JournalInfrared Physics
Issue number6
StatePublished - Nov 1992

All Science Journal Classification (ASJC) codes

  • General Engineering


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