HgCdTe photodiodes-A device study

Fei Ming Tong; Yuan Haoxin; Yang Xiuzhen; N. M. Ravindra

doi:10.1016/0020-0891(92)90067-4

HgCdTe photodiodes-A device study

Fei Ming Tong
, Yuan Haoxin
, Yang Xiuzhen
, N. M. Ravindra

Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Recent developments in HgCdTe photovoltaic detector technology are reviewed. Some aspects of research work on device physics and technology are discussed. These include: the performance of HgCdTe photodiodes for IR fiber communication; the effects of field-enhanced generation-recombination and imperfections of the pn junction on HgCdTe photodiode I-V characteristics; and an analysis of the dependence of energy gap of HgCdTe on temperature and composition.

Original language	English (US)
Pages (from-to)	511-522
Number of pages	12
Journal	Infrared Physics
Volume	33
Issue number	6
DOIs	https://doi.org/10.1016/0020-0891(92)90067-4
State	Published - Nov 1992

All Science Journal Classification (ASJC) codes

General Engineering

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10.1016/0020-0891(92)90067-4

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@article{aa259d82ffc44ef3bc12b24eb8c0132b,

title = "HgCdTe photodiodes-A device study",

abstract = "Recent developments in HgCdTe photovoltaic detector technology are reviewed. Some aspects of research work on device physics and technology are discussed. These include: the performance of HgCdTe photodiodes for IR fiber communication; the effects of field-enhanced generation-recombination and imperfections of the pn junction on HgCdTe photodiode I-V characteristics; and an analysis of the dependence of energy gap of HgCdTe on temperature and composition.",

author = "Tong, \{Fei Ming\} and Yuan Haoxin and Yang Xiuzhen and Ravindra, \{N. M.\}",

note = "Funding Information: tlnancials upport of the Chinese National Science Foundation, the New and the Center for Manufacturing Systems is gratefully acknowledged.",

year = "1992",

month = nov,

doi = "10.1016/0020-0891(92)90067-4",

language = "English (US)",

volume = "33",

pages = "511--522",

journal = "Infrared Physics",

issn = "0020-0891",

publisher = "Elsevier B.V.",

number = "6",

}

TY - JOUR

T1 - HgCdTe photodiodes-A device study

AU - Tong, Fei Ming

AU - Haoxin, Yuan

AU - Xiuzhen, Yang

AU - Ravindra, N. M.

N1 - Funding Information: tlnancials upport of the Chinese National Science Foundation, the New and the Center for Manufacturing Systems is gratefully acknowledged.

PY - 1992/11

Y1 - 1992/11

N2 - Recent developments in HgCdTe photovoltaic detector technology are reviewed. Some aspects of research work on device physics and technology are discussed. These include: the performance of HgCdTe photodiodes for IR fiber communication; the effects of field-enhanced generation-recombination and imperfections of the pn junction on HgCdTe photodiode I-V characteristics; and an analysis of the dependence of energy gap of HgCdTe on temperature and composition.

AB - Recent developments in HgCdTe photovoltaic detector technology are reviewed. Some aspects of research work on device physics and technology are discussed. These include: the performance of HgCdTe photodiodes for IR fiber communication; the effects of field-enhanced generation-recombination and imperfections of the pn junction on HgCdTe photodiode I-V characteristics; and an analysis of the dependence of energy gap of HgCdTe on temperature and composition.

UR - https://www.scopus.com/pages/publications/44049112291

UR - https://www.scopus.com/pages/publications/44049112291#tab=citedBy

U2 - 10.1016/0020-0891(92)90067-4

DO - 10.1016/0020-0891(92)90067-4

M3 - Article

AN - SCOPUS:44049112291

SN - 0020-0891

VL - 33

SP - 511

EP - 522

JO - Infrared Physics

JF - Infrared Physics

IS - 6

ER -

HgCdTe photodiodes-A device study

Abstract

All Science Journal Classification (ASJC) codes

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