HgCdTe photovoltaic detectors and some related aspects

Feiming Tong, Haoxin Yuan, Xiuzhen Yang, Nuggehalli M. Ravindra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Recent developments in HgCdTe photovoltaic detector technology are reviewed. The status of related areas in China are introduced. Some aspects of research work on device physics and technology conducted in the authors' laboratories are discussed. These include: the performance of HgCdTe photodiodes for IR fiber communication; the effects of field-enhanced generation-recombination and imperfections of the pn junction on HgCdTe photodiode I-V characteristics; and an analysis of the dependence of energy gap of HgCdTe on temperature and composition.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Pages182-192
Number of pages11
ISBN (Print)0819408506
StatePublished - Dec 1 1992
Externally publishedYes
EventInfrared Detectors and Focal Plane Arrays II - Orlando, FL, USA
Duration: Apr 23 1992Apr 24 1992

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1685
ISSN (Print)0277-786X

Other

OtherInfrared Detectors and Focal Plane Arrays II
CityOrlando, FL, USA
Period4/23/924/24/92

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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