High-Κ dielectrics and device reliability

M. N. Bhuyian; D. Misra

doi:10.1049/PBCS029E_ch1

High-Κ dielectrics and device reliability

M. N. Bhuyian, D. Misra

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Technology scaling continues to be driven by the cost per function due to proliferation of mobile computing. With sub-45-nm technology node, high-Κ gate dielectrics such as HfO₂ have emerged. This chapter is dedicated to high-Κ dielectrics with particular emphasis to most important characteristics the reliability.

Original language	English (US)
Title of host publication	Nano-CMOS and Post-CMOS Electronics
Subtitle of host publication	Devices and Modelling
Publisher	Institution of Engineering and Technology
Pages	1-33
Number of pages	33
ISBN (Electronic)	9781849199988
ISBN (Print)	9781849199971
DOIs	https://doi.org/10.1049/PBCS029E_ch1
State	Published - Jan 1 2016

All Science Journal Classification (ASJC) codes

General Engineering

Keywords

Device reliability
Hafnium compounds
HfO
High-k dielectric thin films
High-Κ dielectric
Mobile computing
Mobile computing
Technology scaling
semiconductor device reliability

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10.1049/PBCS029E_ch1

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abstract = "Technology scaling continues to be driven by the cost per function due to proliferation of mobile computing. With sub-45-nm technology node, high-Κ gate dielectrics such as HfO2 have emerged. This chapter is dedicated to high-Κ dielectrics with particular emphasis to most important characteristics the reliability.",

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ER -

High-Κ dielectrics and device reliability

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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