High-Κ dielectrics and device reliability

M. N. Bhuyian, D. Misra

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Technology scaling continues to be driven by the cost per function due to proliferation of mobile computing. With sub-45-nm technology node, high-Κ gate dielectrics such as HfO2 have emerged. This chapter is dedicated to high-Κ dielectrics with particular emphasis to most important characteristics the reliability.

Original languageEnglish (US)
Title of host publicationNano-CMOS and Post-CMOS Electronics
Subtitle of host publicationDevices and Modelling
PublisherInstitution of Engineering and Technology
Pages1-33
Number of pages33
ISBN (Electronic)9781849199988
ISBN (Print)9781849199971
DOIs
StatePublished - Jan 1 2016

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Keywords

  • Device reliability
  • Hafnium compounds
  • HfO
  • High-k dielectric thin films
  • High-Κ dielectric
  • Mobile computing
  • Mobile computing
  • Technology scaling
  • semiconductor device reliability

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