High carrier mobility in transparent Ba 1-xLa xSnO 3 crystals with a wide band gap

X. Luo; Y. S. Oh; A. Sirenko; P. Gao; T. A. Tyson; K. Char; S. W. Cheong

doi:10.1063/1.4709415

High carrier mobility in transparent Ba _1-xLa _xSnO ₃ crystals with a wide band gap

X. Luo, Y. S. Oh, A. Sirenko, P. Gao, T. A. Tyson, K. Char, S. W. Cheong

Physics

Research output: Contribution to journal › Article › peer-review

177 Scopus citations

Abstract

We discovered that perovskite (Ba,La)SnO ₃ can have excellent carrier mobility even though its band gap is large. The Hall mobility of Ba _0.98La _0.02SnO ₃ crystals with the n-type carrier concentration of ∼8-10 × 10 ¹⁹cm ^-3 is found to be ∼103 cm ² V ^-1 s ^-1 at room temperature, and the precise measurement of the band gap δ of a BaSnO ₃ crystal shows δ = 4.05 eV, which is significantly larger than those of other transparent conductive oxides. The high mobility with a wide band gap indicates that (Ba,La)SnO ₃ is a promising candidate for transparent conductor applications and also epitaxial all-perovskite multilayer devices.

Original language	English (US)
Article number	172112
Journal	Applied Physics Letters
Volume	100
Issue number	17
DOIs	https://doi.org/10.1063/1.4709415
State	Published - Apr 23 2012

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4709415

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title = "High carrier mobility in transparent Ba 1-xLa xSnO 3 crystals with a wide band gap",

abstract = "We discovered that perovskite (Ba,La)SnO 3 can have excellent carrier mobility even though its band gap is large. The Hall mobility of Ba 0.98La 0.02SnO 3 crystals with the n-type carrier concentration of ∼8-10 × 10 19cm -3 is found to be ∼103 cm 2 V -1 s -1 at room temperature, and the precise measurement of the band gap δ of a BaSnO 3 crystal shows δ = 4.05 eV, which is significantly larger than those of other transparent conductive oxides. The high mobility with a wide band gap indicates that (Ba,La)SnO 3 is a promising candidate for transparent conductor applications and also epitaxial all-perovskite multilayer devices.",

author = "X. Luo and Oh, {Y. S.} and A. Sirenko and P. Gao and Tyson, {T. A.} and K. Char and Cheong, {S. W.}",

note = "Funding Information: Work at Rutgers and NJIT was supported by DOE DE-FG02-07ER46382 and DOE DE-FG02-07ER46402. Ellipsometry measurements were carried out at the Center for Functional nanomaterials, Brookhaven National Laboratory, which is supported by DOE DE-AC02-98CH10886.",

year = "2012",

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doi = "10.1063/1.4709415",

language = "English (US)",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - High carrier mobility in transparent Ba 1-xLa xSnO 3 crystals with a wide band gap

AU - Luo, X.

AU - Oh, Y. S.

AU - Sirenko, A.

AU - Gao, P.

AU - Tyson, T. A.

AU - Char, K.

AU - Cheong, S. W.

N1 - Funding Information: Work at Rutgers and NJIT was supported by DOE DE-FG02-07ER46382 and DOE DE-FG02-07ER46402. Ellipsometry measurements were carried out at the Center for Functional nanomaterials, Brookhaven National Laboratory, which is supported by DOE DE-AC02-98CH10886.

PY - 2012/4/23

Y1 - 2012/4/23

N2 - We discovered that perovskite (Ba,La)SnO 3 can have excellent carrier mobility even though its band gap is large. The Hall mobility of Ba 0.98La 0.02SnO 3 crystals with the n-type carrier concentration of ∼8-10 × 10 19cm -3 is found to be ∼103 cm 2 V -1 s -1 at room temperature, and the precise measurement of the band gap δ of a BaSnO 3 crystal shows δ = 4.05 eV, which is significantly larger than those of other transparent conductive oxides. The high mobility with a wide band gap indicates that (Ba,La)SnO 3 is a promising candidate for transparent conductor applications and also epitaxial all-perovskite multilayer devices.

AB - We discovered that perovskite (Ba,La)SnO 3 can have excellent carrier mobility even though its band gap is large. The Hall mobility of Ba 0.98La 0.02SnO 3 crystals with the n-type carrier concentration of ∼8-10 × 10 19cm -3 is found to be ∼103 cm 2 V -1 s -1 at room temperature, and the precise measurement of the band gap δ of a BaSnO 3 crystal shows δ = 4.05 eV, which is significantly larger than those of other transparent conductive oxides. The high mobility with a wide band gap indicates that (Ba,La)SnO 3 is a promising candidate for transparent conductor applications and also epitaxial all-perovskite multilayer devices.

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JF - Applied Physics Letters

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High carrier mobility in transparent Ba _1-xLa _xSnO ₃ crystals with a wide band gap

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