TY - JOUR
T1 - High efficiency amorphous alloy solar cells prepared by mercury-sensitized photochemical vapor deposition of disilane
AU - Delahoy, Alan E.
N1 - Funding Information:
and Dr. F. B. Ellis, Jr., for helpful discussions and providing granular tin oxide. Thanks go also to Dr. W. A. Lanford, State University of New York {nuclear reaction analysis), Dr. S. F. Chou, Princeton University, {hydrogen evolution), Dr. B. Wilson, AT&T Bell Laboratories (photoluminescence) and Dr. W. Carlos, Naval Research Laboratory (ESR). The work was supported in part by the Solar Energy Research Institute under Subcontract XB-5-04092-1.
PY - 1987
Y1 - 1987
N2 - The deposition of amorphous hydrogenated silicon (a-Si:H) by mercury-sensitized photochemical vapor deposition (photo-CVD) of disilane is reviewed. Depth profiling of the hydrogen in photo-CVD a-Si:H was performed using the nuclear reaction technique, revealing about 12 at.% H in the bulk rising to 18 at.% in the first-deposited layers. The gradation is believed to result from incomplete suppression of window deposition by the perfluoropolyether window coating. Hydrogen evolution studies on photo-CVD a-Si:H show no evidence of a low temperature evolution peak. High efficiency p-it-i-n solar cell structures are discussed, where it is a graded-affinity transitional i layer whose use results in an increased open-circuit voltage Voc. Single-junction solar cell efficiencies of 8.6% and 4.5% are reported for a-Si:H and a-SiGe:H alloys respectively, and preliminary data are presented on a-Si:H/a-SiGe:H tandem cells. The stability of photo-CVD and r.f. glow discharge a-Si:H i layers and p-i-n devices are compared using electron spin resonance measurements, accelerated light soaking techniques and thermal annealing. For the first time, an observable difference between glow discharge and photo-CVD a-Si:H is demonstrated.
AB - The deposition of amorphous hydrogenated silicon (a-Si:H) by mercury-sensitized photochemical vapor deposition (photo-CVD) of disilane is reviewed. Depth profiling of the hydrogen in photo-CVD a-Si:H was performed using the nuclear reaction technique, revealing about 12 at.% H in the bulk rising to 18 at.% in the first-deposited layers. The gradation is believed to result from incomplete suppression of window deposition by the perfluoropolyether window coating. Hydrogen evolution studies on photo-CVD a-Si:H show no evidence of a low temperature evolution peak. High efficiency p-it-i-n solar cell structures are discussed, where it is a graded-affinity transitional i layer whose use results in an increased open-circuit voltage Voc. Single-junction solar cell efficiencies of 8.6% and 4.5% are reported for a-Si:H and a-SiGe:H alloys respectively, and preliminary data are presented on a-Si:H/a-SiGe:H tandem cells. The stability of photo-CVD and r.f. glow discharge a-Si:H i layers and p-i-n devices are compared using electron spin resonance measurements, accelerated light soaking techniques and thermal annealing. For the first time, an observable difference between glow discharge and photo-CVD a-Si:H is demonstrated.
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U2 - 10.1016/0379-6787(87)90115-3
DO - 10.1016/0379-6787(87)90115-3
M3 - Article
AN - SCOPUS:0022738961
SN - 0379-6787
VL - 21
SP - 153
EP - 166
JO - Solar Cells
JF - Solar Cells
IS - 1-4
ER -