High efficiency green/yellow and red InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy

M. R. Philip, D. D. Choudhary, M. Djavid, K. Q. Le, J. Piao, H. P.T. Nguyen

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

We report on the achievement of high efficiency green, yellow, and red InGaN/AlGaN dot-in-a-wire nanowire light-emitting diodes grown on Si(111) by molecular beam epitaxy. The peak emission wavelengths were altered by varying the growth conditions, including the substrate temperature, and In/Ga flux ratio. The devices demonstrate relatively high (>40%) internal quantum efficiency at room temperature, relative to that measured at 5 K. Moreover, negligible blue-shift in peak emission spectrum associated with no efficiency droop was measured when injection current was driven up to 556 A/cm2.

Original languageEnglish (US)
Pages (from-to)150-155
Number of pages6
JournalJournal of Science: Advanced Materials and Devices
Volume2
Issue number2
DOIs
StatePublished - Jun 2017

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Biomaterials
  • Materials Science (miscellaneous)

Keywords

  • Core–shell
  • III-Nitride
  • Light-emitting diodes
  • Molecular beam epitaxy
  • Nanowire

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