Abstract
We report on the achievement of high efficiency green, yellow, and red InGaN/AlGaN dot-in-a-wire nanowire light-emitting diodes grown on Si(111) by molecular beam epitaxy. The peak emission wavelengths were altered by varying the growth conditions, including the substrate temperature, and In/Ga flux ratio. The devices demonstrate relatively high (>40%) internal quantum efficiency at room temperature, relative to that measured at 5 K. Moreover, negligible blue-shift in peak emission spectrum associated with no efficiency droop was measured when injection current was driven up to 556 A/cm2.
Original language | English (US) |
---|---|
Pages (from-to) | 150-155 |
Number of pages | 6 |
Journal | Journal of Science: Advanced Materials and Devices |
Volume | 2 |
Issue number | 2 |
DOIs | |
State | Published - Jun 2017 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Biomaterials
- Materials Science (miscellaneous)
Keywords
- Core–shell
- III-Nitride
- Light-emitting diodes
- Molecular beam epitaxy
- Nanowire