High-efficiency InGaN blue LEDs with reduced positive sheet polarization

Ravi Teja Velpula, Barsha Jain, Moulik Patel, Fatemeh Mohammadi Shakiba, Ngo Quoc Toan, Hoang Duy Nguyen, Hieu Pham Trung Nguyen

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


The formation of positive sheet polarization charges at the interface of the last quantum barrier (QB) and the conventional p-type electron-blocking layer (EBL) creates significant band bending, leading to severe electron leakage and poor hole injection in III-nitride light-emitting diodes. We report that the positive sheet polarization charges are mitigated by employing a lattice matched AlGaN last QB. Electron leakage is dramatically reduced due to the increased effective conduction band height at the last QB and EBL. Furthermore, it favors hole injection into the active region due to the reduced effective valance band height for EBL.

Original languageEnglish (US)
Pages (from-to)4967-4970
Number of pages4
JournalApplied Optics
Issue number16
StatePublished - Jun 1 2022

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Engineering (miscellaneous)
  • Electrical and Electronic Engineering


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