High-efficiency InGaN blue LEDs with reduced positive sheet polarization

Ravi Teja Velpula; Barsha Jain; Moulik Patel; Fatemeh Mohammadi Shakiba; Ngo Quoc Toan; Hoang Duy Nguyen; Hieu Pham Trung Nguyen

doi:10.1364/AO.458463

High-efficiency InGaN blue LEDs with reduced positive sheet polarization

Ravi Teja Velpula, Barsha Jain, Moulik Patel, Fatemeh Mohammadi Shakiba, Ngo Quoc Toan, Hoang Duy Nguyen, Hieu Pham Trung Nguyen

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The formation of positive sheet polarization charges at the interface of the last quantum barrier (QB) and the conventional p-type electron-blocking layer (EBL) creates significant band bending, leading to severe electron leakage and poor hole injection in III-nitride light-emitting diodes. We report that the positive sheet polarization charges are mitigated by employing a lattice matched AlGaN last QB. Electron leakage is dramatically reduced due to the increased effective conduction band height at the last QB and EBL. Furthermore, it favors hole injection into the active region due to the reduced effective valance band height for EBL.

Original language	English (US)
Pages (from-to)	4967-4970
Number of pages	4
Journal	Applied Optics
Volume	61
Issue number	16
DOIs	https://doi.org/10.1364/AO.458463
State	Published - Jun 1 2022

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Engineering (miscellaneous)
Electrical and Electronic Engineering

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10.1364/AO.458463

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title = "High-efficiency InGaN blue LEDs with reduced positive sheet polarization",

abstract = "The formation of positive sheet polarization charges at the interface of the last quantum barrier (QB) and the conventional p-type electron-blocking layer (EBL) creates significant band bending, leading to severe electron leakage and poor hole injection in III-nitride light-emitting diodes. We report that the positive sheet polarization charges are mitigated by employing a lattice matched AlGaN last QB. Electron leakage is dramatically reduced due to the increased effective conduction band height at the last QB and EBL. Furthermore, it favors hole injection into the active region due to the reduced effective valance band height for EBL.",

author = "Velpula, {Ravi Teja} and Barsha Jain and Moulik Patel and Shakiba, {Fatemeh Mohammadi} and Toan, {Ngo Quoc} and Nguyen, {Hoang Duy} and Nguyen, {Hieu Pham Trung}",

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doi = "10.1364/AO.458463",

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T1 - High-efficiency InGaN blue LEDs with reduced positive sheet polarization

AU - Velpula, Ravi Teja

AU - Jain, Barsha

AU - Patel, Moulik

AU - Shakiba, Fatemeh Mohammadi

AU - Toan, Ngo Quoc

AU - Nguyen, Hoang Duy

AU - Nguyen, Hieu Pham Trung

PY - 2022/6/1

Y1 - 2022/6/1

N2 - The formation of positive sheet polarization charges at the interface of the last quantum barrier (QB) and the conventional p-type electron-blocking layer (EBL) creates significant band bending, leading to severe electron leakage and poor hole injection in III-nitride light-emitting diodes. We report that the positive sheet polarization charges are mitigated by employing a lattice matched AlGaN last QB. Electron leakage is dramatically reduced due to the increased effective conduction band height at the last QB and EBL. Furthermore, it favors hole injection into the active region due to the reduced effective valance band height for EBL.

AB - The formation of positive sheet polarization charges at the interface of the last quantum barrier (QB) and the conventional p-type electron-blocking layer (EBL) creates significant band bending, leading to severe electron leakage and poor hole injection in III-nitride light-emitting diodes. We report that the positive sheet polarization charges are mitigated by employing a lattice matched AlGaN last QB. Electron leakage is dramatically reduced due to the increased effective conduction band height at the last QB and EBL. Furthermore, it favors hole injection into the active region due to the reduced effective valance band height for EBL.

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JO - Applied Optics

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High-efficiency InGaN blue LEDs with reduced positive sheet polarization

Abstract

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