High efficiency InGaN/GaN dot-in-a-wire light emitting diodes grown by molecular beam epitaxy on Si(111)

H. P.T. Nguyen; S. Zhang; K. Cui; X. Han; Z. Mi

doi:10.1364/cleo_si.2011.cmu4

High efficiency InGaN/GaN dot-in-a-wire light emitting diodes grown by molecular beam epitaxy on Si(111)

H. P.T. Nguyen, S. Zhang, K. Cui, X. Han, Z. Mi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

A record high internal quantum efficiency of 36.7% was achieved for nanowire LEDs by using InGaN/GaN dot-in-a-wire heterostructures. The devices can exhibit strong green, red, and white emission, depending on the dot sizes and compositions.

Original language	English (US)
Title of host publication	2011 Conference on Lasers and Electro-Optics
Subtitle of host publication	Laser Science to Photonic Applications, CLEO 2011
Publisher	IEEE Computer Society
ISBN (Print)	9781557529107
DOIs	https://doi.org/10.1364/cleo_si.2011.cmu4
State	Published - 2011
Externally published	Yes

Publication series

Name	2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

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10.1364/cleo_si.2011.cmu4

Cite this

Nguyen, H. P. T., Zhang, S., Cui, K., Han, X., & Mi, Z. (2011). High efficiency InGaN/GaN dot-in-a-wire light emitting diodes grown by molecular beam epitaxy on Si(111). In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011 Article 5950325 (2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011). IEEE Computer Society. https://doi.org/10.1364/cleo_si.2011.cmu4

Nguyen, H. P.T. ; Zhang, S. ; Cui, K. et al. / High efficiency InGaN/GaN dot-in-a-wire light emitting diodes grown by molecular beam epitaxy on Si(111). 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011. IEEE Computer Society, 2011. (2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011).

@inproceedings{a699fb4d143448db95d3d3314770b49b,

title = "High efficiency InGaN/GaN dot-in-a-wire light emitting diodes grown by molecular beam epitaxy on Si(111)",

abstract = "A record high internal quantum efficiency of 36.7% was achieved for nanowire LEDs by using InGaN/GaN dot-in-a-wire heterostructures. The devices can exhibit strong green, red, and white emission, depending on the dot sizes and compositions.",

author = "Nguyen, {H. P.T.} and S. Zhang and K. Cui and X. Han and Z. Mi",

year = "2011",

doi = "10.1364/cleo_si.2011.cmu4",

language = "English (US)",

isbn = "9781557529107",

series = "2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011",

publisher = "IEEE Computer Society",

booktitle = "2011 Conference on Lasers and Electro-Optics",

address = "United States",

}

Nguyen, HPT, Zhang, S, Cui, K, Han, X & Mi, Z 2011, High efficiency InGaN/GaN dot-in-a-wire light emitting diodes grown by molecular beam epitaxy on Si(111). in 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011., 5950325, 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011, IEEE Computer Society. https://doi.org/10.1364/cleo_si.2011.cmu4

High efficiency InGaN/GaN dot-in-a-wire light emitting diodes grown by molecular beam epitaxy on Si(111). / Nguyen, H. P.T.; Zhang, S.; Cui, K. et al.
2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011. IEEE Computer Society, 2011. 5950325 (2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - High efficiency InGaN/GaN dot-in-a-wire light emitting diodes grown by molecular beam epitaxy on Si(111)

AU - Nguyen, H. P.T.

AU - Zhang, S.

AU - Cui, K.

AU - Han, X.

AU - Mi, Z.

PY - 2011

Y1 - 2011

N2 - A record high internal quantum efficiency of 36.7% was achieved for nanowire LEDs by using InGaN/GaN dot-in-a-wire heterostructures. The devices can exhibit strong green, red, and white emission, depending on the dot sizes and compositions.

AB - A record high internal quantum efficiency of 36.7% was achieved for nanowire LEDs by using InGaN/GaN dot-in-a-wire heterostructures. The devices can exhibit strong green, red, and white emission, depending on the dot sizes and compositions.

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U2 - 10.1364/cleo_si.2011.cmu4

DO - 10.1364/cleo_si.2011.cmu4

M3 - Conference contribution

AN - SCOPUS:80052122172

SN - 9781557529107

T3 - 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011

BT - 2011 Conference on Lasers and Electro-Optics

PB - IEEE Computer Society

ER -

Nguyen HPT, Zhang S, Cui K, Han X, Mi Z. High efficiency InGaN/GaN dot-in-a-wire light emitting diodes grown by molecular beam epitaxy on Si(111). In 2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011. IEEE Computer Society. 2011. 5950325. (2011 Conference on Lasers and Electro-Optics: Laser Science to Photonic Applications, CLEO 2011). doi: 10.1364/cleo_si.2011.cmu4

High efficiency InGaN/GaN dot-in-a-wire light emitting diodes grown by molecular beam epitaxy on Si(111)

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