TY - GEN
T1 - High efficiency InGaN/GaN dot-in-a-wire light emitting diodes grown by molecular beam epitaxy on Si(111)
AU - Nguyen, H. P.T.
AU - Zhang, S.
AU - Cui, K.
AU - Han, X.
AU - Mi, Z.
PY - 2011
Y1 - 2011
N2 - A record high internal quantum efficiency of 36.7% was achieved for nanowire LEDs by using InGaN/GaN dot-in-a-wire heterostructures. The devices can exhibit strong green, red, and white emission, depending on the dot sizes and compositions.
AB - A record high internal quantum efficiency of 36.7% was achieved for nanowire LEDs by using InGaN/GaN dot-in-a-wire heterostructures. The devices can exhibit strong green, red, and white emission, depending on the dot sizes and compositions.
UR - http://www.scopus.com/inward/record.url?scp=84893550084&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84893550084&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84893550084
SN - 9781557529107
T3 - Optics InfoBase Conference Papers
BT - CLEO
T2 - CLEO: Science and Innovations, CLEO_SI 2011
Y2 - 1 May 2011 through 6 May 2011
ER -