High efficiency InGaN/GaN dot-in-a-wire light emitting diodes grown by molecular beam epitaxy on Si(111)

H. P.T. Nguyen, S. Zhang, K. Cui, X. Han, Z. Mi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A record high internal quantum efficiency of 36.7% was achieved for nanowire LEDs by using InGaN/GaN dot-in-a-wire heterostructures. The devices can exhibit strong green, red, and white emission, depending on the dot sizes and compositions.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2011
StatePublished - Dec 1 2011
Externally publishedYes
EventCLEO: Science and Innovations, CLEO_SI 2011 - Baltimore, MD, United States
Duration: May 1 2011May 6 2011

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherCLEO: Science and Innovations, CLEO_SI 2011
CountryUnited States
CityBaltimore, MD
Period5/1/115/6/11

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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