We report on the achievement of high-performance InGaN/GaN dot-in-a-wire red light-emitting diodes on Si(111) substrates. Owing to the superior 3-D carrier confinement offered by the self-organized dot-in-a-wire heterostructures, the devices exhibit relatively high ( ∼ 18 % - 32 %) internal quantum efficiency at room temperature. Moreover, no efficiency droop was observed for injection current up to ∼480 A cm 2 under pulsed biasing conditions. We have also demonstrated that, by controlling the inhomogeneous broadening of the dot-in-a-wire heterostructures, the devices can exhibit relatively stable emission characteristics with increasing current.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
- light-emitting diodes (LEDs)
- molecular beam epitaxy
- quantum dot