High-efficiency InGaN/GaN dot-in-a-wire red light-emitting diodes

Hieu Pham Trung Nguyen, Shaofei Zhang, Kai Cui, Andreas Korinek, Gianluigi A. Botton, Zetian Mi

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

We report on the achievement of high-performance InGaN/GaN dot-in-a-wire red light-emitting diodes on Si(111) substrates. Owing to the superior 3-D carrier confinement offered by the self-organized dot-in-a-wire heterostructures, the devices exhibit relatively high ( ∼ 18 % - 32 %) internal quantum efficiency at room temperature. Moreover, no efficiency droop was observed for injection current up to ∼480 A cm 2 under pulsed biasing conditions. We have also demonstrated that, by controlling the inhomogeneous broadening of the dot-in-a-wire heterostructures, the devices can exhibit relatively stable emission characteristics with increasing current.

Original languageEnglish (US)
Article number6095318
Pages (from-to)321-323
Number of pages3
JournalIEEE Photonics Technology Letters
Volume24
Issue number4
DOIs
StatePublished - 2012
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Keywords

  • InGaN
  • light-emitting diodes (LEDs)
  • molecular beam epitaxy
  • nanowire
  • quantum dot

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