TY - JOUR
T1 - High-efficiency InGaN/GaN dot-in-a-wire red light-emitting diodes
AU - Nguyen, Hieu Pham Trung
AU - Zhang, Shaofei
AU - Cui, Kai
AU - Korinek, Andreas
AU - Botton, Gianluigi A.
AU - Mi, Zetian
N1 - Funding Information:
Manuscript received July 24, 2011; revised September 6, 2011; accepted September 14, 2011. Date of publication December 5, 2011; date of current version January 27, 2012. This work was supported in part by the Natural Sciences and Engineering Research Council of Canada, in part by the Canada Foundation for Innovation, and in part by McGill University. Part of this work was performed in the Micro Fabrication facility at McGill University. Transmission electron microscopy observations were carried out at the Canadian Centre for Electron Microscopy, a national facility supported by Natural Sciences and Engineering Research Council and McMaster University, Hamilton, ON, Canada.
PY - 2012
Y1 - 2012
N2 - We report on the achievement of high-performance InGaN/GaN dot-in-a-wire red light-emitting diodes on Si(111) substrates. Owing to the superior 3-D carrier confinement offered by the self-organized dot-in-a-wire heterostructures, the devices exhibit relatively high ( ∼ 18 % - 32 %) internal quantum efficiency at room temperature. Moreover, no efficiency droop was observed for injection current up to ∼480 A cm 2 under pulsed biasing conditions. We have also demonstrated that, by controlling the inhomogeneous broadening of the dot-in-a-wire heterostructures, the devices can exhibit relatively stable emission characteristics with increasing current.
AB - We report on the achievement of high-performance InGaN/GaN dot-in-a-wire red light-emitting diodes on Si(111) substrates. Owing to the superior 3-D carrier confinement offered by the self-organized dot-in-a-wire heterostructures, the devices exhibit relatively high ( ∼ 18 % - 32 %) internal quantum efficiency at room temperature. Moreover, no efficiency droop was observed for injection current up to ∼480 A cm 2 under pulsed biasing conditions. We have also demonstrated that, by controlling the inhomogeneous broadening of the dot-in-a-wire heterostructures, the devices can exhibit relatively stable emission characteristics with increasing current.
KW - InGaN
KW - light-emitting diodes (LEDs)
KW - molecular beam epitaxy
KW - nanowire
KW - quantum dot
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U2 - 10.1109/LPT.2011.2178091
DO - 10.1109/LPT.2011.2178091
M3 - Article
AN - SCOPUS:84863036706
SN - 1041-1135
VL - 24
SP - 321
EP - 323
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 4
M1 - 6095318
ER -