High-efficiency InGaN/GaN dot-in-a-wire red light-emitting diodes

Hieu Pham Trung Nguyen; Shaofei Zhang; Kai Cui; Andreas Korinek; Gianluigi A. Botton; Zetian Mi

doi:10.1109/LPT.2011.2178091

High-efficiency InGaN/GaN dot-in-a-wire red light-emitting diodes

Hieu Pham Trung Nguyen
, Shaofei Zhang
, Kai Cui
, Andreas Korinek
, Gianluigi A. Botton
, Zetian Mi

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

We report on the achievement of high-performance InGaN/GaN dot-in-a-wire red light-emitting diodes on Si(111) substrates. Owing to the superior 3-D carrier confinement offered by the self-organized dot-in-a-wire heterostructures, the devices exhibit relatively high ( ∼ 18 % - 32 %) internal quantum efficiency at room temperature. Moreover, no efficiency droop was observed for injection current up to ∼480 A cm ² under pulsed biasing conditions. We have also demonstrated that, by controlling the inhomogeneous broadening of the dot-in-a-wire heterostructures, the devices can exhibit relatively stable emission characteristics with increasing current.

Original language	English (US)
Article number	6095318
Pages (from-to)	321-323
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	24
Issue number	4
DOIs	https://doi.org/10.1109/LPT.2011.2178091
State	Published - 2012
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Keywords

InGaN
light-emitting diodes (LEDs)
molecular beam epitaxy
nanowire
quantum dot

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10.1109/LPT.2011.2178091

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title = "High-efficiency InGaN/GaN dot-in-a-wire red light-emitting diodes",

abstract = "We report on the achievement of high-performance InGaN/GaN dot-in-a-wire red light-emitting diodes on Si(111) substrates. Owing to the superior 3-D carrier confinement offered by the self-organized dot-in-a-wire heterostructures, the devices exhibit relatively high ( ∼ 18 \% - 32 \%) internal quantum efficiency at room temperature. Moreover, no efficiency droop was observed for injection current up to ∼480 A cm 2 under pulsed biasing conditions. We have also demonstrated that, by controlling the inhomogeneous broadening of the dot-in-a-wire heterostructures, the devices can exhibit relatively stable emission characteristics with increasing current.",

keywords = "InGaN, light-emitting diodes (LEDs), molecular beam epitaxy, nanowire, quantum dot",

author = "Nguyen, \{Hieu Pham Trung\} and Shaofei Zhang and Kai Cui and Andreas Korinek and Botton, \{Gianluigi A.\} and Zetian Mi",

note = "Funding Information: Manuscript received July 24, 2011; revised September 6, 2011; accepted September 14, 2011. Date of publication December 5, 2011; date of current version January 27, 2012. This work was supported in part by the Natural Sciences and Engineering Research Council of Canada, in part by the Canada Foundation for Innovation, and in part by McGill University. Part of this work was performed in the Micro Fabrication facility at McGill University. Transmission electron microscopy observations were carried out at the Canadian Centre for Electron Microscopy, a national facility supported by Natural Sciences and Engineering Research Council and McMaster University, Hamilton, ON, Canada.",

year = "2012",

doi = "10.1109/LPT.2011.2178091",

language = "English (US)",

volume = "24",

pages = "321--323",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - High-efficiency InGaN/GaN dot-in-a-wire red light-emitting diodes

AU - Nguyen, Hieu Pham Trung

AU - Zhang, Shaofei

AU - Cui, Kai

AU - Korinek, Andreas

AU - Botton, Gianluigi A.

AU - Mi, Zetian

N1 - Funding Information: Manuscript received July 24, 2011; revised September 6, 2011; accepted September 14, 2011. Date of publication December 5, 2011; date of current version January 27, 2012. This work was supported in part by the Natural Sciences and Engineering Research Council of Canada, in part by the Canada Foundation for Innovation, and in part by McGill University. Part of this work was performed in the Micro Fabrication facility at McGill University. Transmission electron microscopy observations were carried out at the Canadian Centre for Electron Microscopy, a national facility supported by Natural Sciences and Engineering Research Council and McMaster University, Hamilton, ON, Canada.

PY - 2012

Y1 - 2012

N2 - We report on the achievement of high-performance InGaN/GaN dot-in-a-wire red light-emitting diodes on Si(111) substrates. Owing to the superior 3-D carrier confinement offered by the self-organized dot-in-a-wire heterostructures, the devices exhibit relatively high ( ∼ 18 % - 32 %) internal quantum efficiency at room temperature. Moreover, no efficiency droop was observed for injection current up to ∼480 A cm 2 under pulsed biasing conditions. We have also demonstrated that, by controlling the inhomogeneous broadening of the dot-in-a-wire heterostructures, the devices can exhibit relatively stable emission characteristics with increasing current.

AB - We report on the achievement of high-performance InGaN/GaN dot-in-a-wire red light-emitting diodes on Si(111) substrates. Owing to the superior 3-D carrier confinement offered by the self-organized dot-in-a-wire heterostructures, the devices exhibit relatively high ( ∼ 18 % - 32 %) internal quantum efficiency at room temperature. Moreover, no efficiency droop was observed for injection current up to ∼480 A cm 2 under pulsed biasing conditions. We have also demonstrated that, by controlling the inhomogeneous broadening of the dot-in-a-wire heterostructures, the devices can exhibit relatively stable emission characteristics with increasing current.

KW - InGaN

KW - light-emitting diodes (LEDs)

KW - molecular beam epitaxy

KW - nanowire

KW - quantum dot

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DO - 10.1109/LPT.2011.2178091

M3 - Article

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 4

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ER -

High-efficiency InGaN/GaN dot-in-a-wire red light-emitting diodes

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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