High efficiency photoelectrochemical water splitting and hydrogen generation using GaN nanowire photoelectrode

B. Alotaibi, M. Harati, S. Fan, S. Zhao, H. P.T. Nguyen, M. G. Kibria, Z. Mi

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64 Scopus citations

Abstract

We have studied the photoelectrochemical properties of both undoped and Si-doped GaN nanowire arrays in 1 mol l-1 solutions of hydrogen bromide and potassium bromide, which were used separately as electrolytes. It is observed that variations of the photocurrent with bias voltage depend strongly on the n-type doping in GaN nanowires in both electrolytes, which are analyzed in the context of GaN surface band bending and its variation with the incorporation of Si-doping. Maximum incident-photon-to-current-conversion efficiencies of ∼15% and 18% are measured for undoped and Si-doped GaN nanowires under ∼350 nm light illumination, respectively. Stable hydrogen generation is also observed at a zero bias potential versus the counter-electrode.

Original languageEnglish (US)
Article number175401
JournalNanotechnology
Volume24
Issue number17
DOIs
StatePublished - May 3 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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