High efficiency ultraviolet emission from Al xGa 1-xN core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy

Q. Wang; H. P.T. Nguyen; K. Cui; Z. Mi

doi:10.1063/1.4738983

High efficiency ultraviolet emission from Al _xGa _1-xN core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy

Q. Wang, H. P.T. Nguyen, K. Cui, Z. Mi

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

High crystalline quality, vertically aligned Al _xGa _1-xN nanowire heterostructures are grown on GaN nanowire templates on Si (111) substrates by plasma-assisted molecular beam epitaxy. The nanowires exhibit unique core-shell structures, with enhanced Al compositions in the near-surface region. The emission wavelength can be varied across nearly the entire ultraviolet A (∼3.10-3.94 eV) and B (∼3.94-4.43 eV) spectral range by controlling the Al compositions. Such nanowire structures can exhibit extremely high internal quantum efficiency (up to ∼58) at room-temperature, which is attributed to the superior carrier confinement offered by the core-shell structures and to the use of defect-free GaN nanowire templates.

Original language	English (US)
Article number	043115
Journal	Applied Physics Letters
Volume	101
Issue number	4
DOIs	https://doi.org/10.1063/1.4738983
State	Published - Jul 23 2012
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4738983

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title = "High efficiency ultraviolet emission from Al xGa 1-xN core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy",

abstract = "High crystalline quality, vertically aligned Al xGa 1-xN nanowire heterostructures are grown on GaN nanowire templates on Si (111) substrates by plasma-assisted molecular beam epitaxy. The nanowires exhibit unique core-shell structures, with enhanced Al compositions in the near-surface region. The emission wavelength can be varied across nearly the entire ultraviolet A (∼3.10-3.94 eV) and B (∼3.94-4.43 eV) spectral range by controlling the Al compositions. Such nanowire structures can exhibit extremely high internal quantum efficiency (up to ∼58) at room-temperature, which is attributed to the superior carrier confinement offered by the core-shell structures and to the use of defect-free GaN nanowire templates.",

author = "Q. Wang and Nguyen, {H. P.T.} and K. Cui and Z. Mi",

note = "Funding Information: This work is supported by the Natural Sciences and Engineering Research Council of Canada, the Fonds de recherch{\'e} sur la nature et les technologies, and Canada Foundation for Innovation (CFI). Part of the work was performed in the Micro-fabrication Facility at McGill University.",

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doi = "10.1063/1.4738983",

language = "English (US)",

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journal = "Applied Physics Letters",

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T1 - High efficiency ultraviolet emission from Al xGa 1-xN core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy

AU - Wang, Q.

AU - Nguyen, H. P.T.

AU - Cui, K.

AU - Mi, Z.

N1 - Funding Information: This work is supported by the Natural Sciences and Engineering Research Council of Canada, the Fonds de recherché sur la nature et les technologies, and Canada Foundation for Innovation (CFI). Part of the work was performed in the Micro-fabrication Facility at McGill University.

PY - 2012/7/23

Y1 - 2012/7/23

N2 - High crystalline quality, vertically aligned Al xGa 1-xN nanowire heterostructures are grown on GaN nanowire templates on Si (111) substrates by plasma-assisted molecular beam epitaxy. The nanowires exhibit unique core-shell structures, with enhanced Al compositions in the near-surface region. The emission wavelength can be varied across nearly the entire ultraviolet A (∼3.10-3.94 eV) and B (∼3.94-4.43 eV) spectral range by controlling the Al compositions. Such nanowire structures can exhibit extremely high internal quantum efficiency (up to ∼58) at room-temperature, which is attributed to the superior carrier confinement offered by the core-shell structures and to the use of defect-free GaN nanowire templates.

AB - High crystalline quality, vertically aligned Al xGa 1-xN nanowire heterostructures are grown on GaN nanowire templates on Si (111) substrates by plasma-assisted molecular beam epitaxy. The nanowires exhibit unique core-shell structures, with enhanced Al compositions in the near-surface region. The emission wavelength can be varied across nearly the entire ultraviolet A (∼3.10-3.94 eV) and B (∼3.94-4.43 eV) spectral range by controlling the Al compositions. Such nanowire structures can exhibit extremely high internal quantum efficiency (up to ∼58) at room-temperature, which is attributed to the superior carrier confinement offered by the core-shell structures and to the use of defect-free GaN nanowire templates.

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High efficiency ultraviolet emission from Al _xGa _1-xN core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy

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