High efficiency ultraviolet emission from Al xGa 1-xN core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy

Q. Wang, H. P.T. Nguyen, K. Cui, Z. Mi

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Abstract

High crystalline quality, vertically aligned Al xGa 1-xN nanowire heterostructures are grown on GaN nanowire templates on Si (111) substrates by plasma-assisted molecular beam epitaxy. The nanowires exhibit unique core-shell structures, with enhanced Al compositions in the near-surface region. The emission wavelength can be varied across nearly the entire ultraviolet A (∼3.10-3.94 eV) and B (∼3.94-4.43 eV) spectral range by controlling the Al compositions. Such nanowire structures can exhibit extremely high internal quantum efficiency (up to ∼58) at room-temperature, which is attributed to the superior carrier confinement offered by the core-shell structures and to the use of defect-free GaN nanowire templates.

Original languageEnglish (US)
Article number043115
JournalApplied Physics Letters
Volume101
Issue number4
DOIs
StatePublished - Jul 23 2012
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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