High-efficiency ultraviolet emission from AlInN/GaN nanowires grown by molecular beam epitaxy

Ravi Teja Velpula, Barsha Jain, Ha Quoc Thang Bui, Hieu Pham Trung Nguyen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The epitaxial growth and characterization of AlInN/GaN core-shell nanowire structures with highly stable emission and high internal quantum efficiency of ~52% in the ultraviolet wavelength range are presented.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2020
PublisherOSA - The Optical Society
ISBN (Electronic)9781557528209
DOIs
StatePublished - 2020
EventCLEO: Science and Innovations, CLEO_SI 2020 - Washington, United States
Duration: May 10 2020May 15 2020

Publication series

NameOptics InfoBase Conference Papers
VolumePart F183-CLEO-SI 2020

Conference

ConferenceCLEO: Science and Innovations, CLEO_SI 2020
Country/TerritoryUnited States
CityWashington
Period5/10/205/15/20

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

Fingerprint

Dive into the research topics of 'High-efficiency ultraviolet emission from AlInN/GaN nanowires grown by molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this