High gain limiting amplifier for 10 Gbps lightwave receivers

G. Georgiou; P. Paschke; R. Kopf; R. Hamm; R. Ryan; A. Tate; J. Burm; C. Schulien; Y. K. Chen

High gain limiting amplifier for 10 Gbps lightwave receivers

G. Georgiou, P. Paschke, R. Kopf, R. Hamm, R. Ryan, A. Tate, J. Burm, C. Schulien, Y. K. Chen

Research output: Contribution to journal › Conference article › peer-review

Abstract

An InP HBT technology developed at Lucent Technologies Bell Laboratories, with peak f_t to approximately 100 GHz is used to design and fabricate a limiting amplifier with high gain and bandwidth margin at 10 Gbps. Feedback techniques are used to obtain >30 dB differential gain with >10 GHz bandwidth for the packaged chip. The design reduces current density with standard cell transistors to improve circuit reliability (at the expense of performance). Stable operating conditions are found by adjusting the DC bias tail currents. The limiting output is set by the current in the output stage. Open eyes are obtained even with >2 V differential output. Depending on the required output swing, the power consumption is 200-500 mW (at V_ee to approximately -3.5 to -4.5 V).

Original language	English (US)
Pages (from-to)	71-74
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM) - Davos, Switz Duration: May 16 1999 → May 20 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "High gain limiting amplifier for 10 Gbps lightwave receivers",

abstract = "An InP HBT technology developed at Lucent Technologies Bell Laboratories, with peak ft to approximately 100 GHz is used to design and fabricate a limiting amplifier with high gain and bandwidth margin at 10 Gbps. Feedback techniques are used to obtain >30 dB differential gain with >10 GHz bandwidth for the packaged chip. The design reduces current density with standard cell transistors to improve circuit reliability (at the expense of performance). Stable operating conditions are found by adjusting the DC bias tail currents. The limiting output is set by the current in the output stage. Open eyes are obtained even with >2 V differential output. Depending on the required output swing, the power consumption is 200-500 mW (at Vee to approximately -3.5 to -4.5 V).",

author = "G. Georgiou and P. Paschke and R. Kopf and R. Hamm and R. Ryan and A. Tate and J. Burm and C. Schulien and Chen, {Y. K.}",

year = "1999",

language = "English (US)",

pages = "71--74",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM) ; Conference date: 16-05-1999 Through 20-05-1999",

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TY - JOUR

T1 - High gain limiting amplifier for 10 Gbps lightwave receivers

AU - Georgiou, G.

AU - Paschke, P.

AU - Kopf, R.

AU - Hamm, R.

AU - Ryan, R.

AU - Tate, A.

AU - Burm, J.

AU - Schulien, C.

AU - Chen, Y. K.

PY - 1999

Y1 - 1999

N2 - An InP HBT technology developed at Lucent Technologies Bell Laboratories, with peak ft to approximately 100 GHz is used to design and fabricate a limiting amplifier with high gain and bandwidth margin at 10 Gbps. Feedback techniques are used to obtain >30 dB differential gain with >10 GHz bandwidth for the packaged chip. The design reduces current density with standard cell transistors to improve circuit reliability (at the expense of performance). Stable operating conditions are found by adjusting the DC bias tail currents. The limiting output is set by the current in the output stage. Open eyes are obtained even with >2 V differential output. Depending on the required output swing, the power consumption is 200-500 mW (at Vee to approximately -3.5 to -4.5 V).

AB - An InP HBT technology developed at Lucent Technologies Bell Laboratories, with peak ft to approximately 100 GHz is used to design and fabricate a limiting amplifier with high gain and bandwidth margin at 10 Gbps. Feedback techniques are used to obtain >30 dB differential gain with >10 GHz bandwidth for the packaged chip. The design reduces current density with standard cell transistors to improve circuit reliability (at the expense of performance). Stable operating conditions are found by adjusting the DC bias tail currents. The limiting output is set by the current in the output stage. Open eyes are obtained even with >2 V differential output. Depending on the required output swing, the power consumption is 200-500 mW (at Vee to approximately -3.5 to -4.5 V).

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M3 - Conference article

AN - SCOPUS:0032691944

SN - 1092-8669

SP - 71

EP - 74

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - Proceedings of the 1999 11th International Conference on Indium Phosphide and Related Materials (IPRM)

Y2 - 16 May 1999 through 20 May 1999

ER -

High gain limiting amplifier for 10 Gbps lightwave receivers

Abstract

All Science Journal Classification (ASJC) codes

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