Abstract
The requirements, current status of fabrication/processing, electrical properties and reliability issues of high-k-dielectrics are studied. The underlying physics for these undesirable properties is governed primarily by the ionic nature of the transition metal (TM) oxide. TM-based high-k dielectrics materials are typically deposited on crystalline silicon rather than thermally grown. The electrical properties and reliability must be investigated further before high-k materials become an integral part of nanoscale CMOS devices.
Original language | English (US) |
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Pages (from-to) | 30-34 |
Number of pages | 5 |
Journal | Electrochemical Society Interface |
Volume | 14 |
Issue number | 2 |
State | Published - Jun 2005 |
All Science Journal Classification (ASJC) codes
- Electrochemistry