High-k gate dielectrics

Durga Misra, Hiroshi Iwai, Hei Wong

Research output: Contribution to journalReview articlepeer-review

38 Scopus citations


The requirements, current status of fabrication/processing, electrical properties and reliability issues of high-k-dielectrics are studied. The underlying physics for these undesirable properties is governed primarily by the ionic nature of the transition metal (TM) oxide. TM-based high-k dielectrics materials are typically deposited on crystalline silicon rather than thermally grown. The electrical properties and reliability must be investigated further before high-k materials become an integral part of nanoscale CMOS devices.

Original languageEnglish (US)
Pages (from-to)30-34
Number of pages5
JournalElectrochemical Society Interface
Issue number2
StatePublished - Jun 2005

All Science Journal Classification (ASJC) codes

  • Electrochemistry


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