High-performance and high-uniformity InP/InGaAs/InP DHBT technology for high-speed optical communication systems

Y. Yang; J. Frackoviak; C. T. Liu; C. J. Chen; L. L. Chua; W. J. Sung; A. Tate; J. Tong; R. Reyes; R. Kopf; R. Ruel; D. Werder; V. Houtsma; G. Georgiou; J. S. Weiner; Y. Baeyens; Y. K. Chen

High-performance and high-uniformity InP/InGaAs/InP DHBT technology for high-speed optical communication systems

Y. Yang, J. Frackoviak, C. T. Liu, C. J. Chen, L. L. Chua, W. J. Sung, A. Tate, J. Tong, R. Reyes, R. Kopf, R. Ruel, D. Werder, V. Houtsma, G. Georgiou, J. S. Weiner, Y. Baeyens, Y. K. Chen

Research output: Contribution to conference › Paper › peer-review

10 Scopus citations

Abstract

A high-performance and high-uniformity InP/InGaAs/InP double-hetero-structure bipolar transistors (DHBT) technology for high-speed optical communication systems was described. The InP/InGaAs DHBT's were grown on a 2-inch diameter (100) oriented InP substrate using metal-organic molecular beam epitaxy (MOMBE). The HBT device unit cell consisted of single- and multiple-finger devices with different emitter widths. The above technology was found suitable for integrated circuit fabrications as it exhibits good yields across wafer, wafer-to-wafer and lot-to-lot uniformity.

Original language	English (US)
Pages	269-272
Number of pages	4
State	Published - 2002
Externally published	Yes
Event	Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) - Monterey, CA, United States Duration: Oct 20 2002 → Oct 23 2002

Other

Other	Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)
Country/Territory	United States
City	Monterey, CA
Period	10/20/02 → 10/23/02

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

Yang, Y., Frackoviak, J., Liu, C. T., Chen, C. J., Chua, L. L., Sung, W. J., Tate, A., Tong, J., Reyes, R., Kopf, R., Ruel, R., Werder, D., Houtsma, V., Georgiou, G., Weiner, J. S., Baeyens, Y., & Chen, Y. K. (2002). High-performance and high-uniformity InP/InGaAs/InP DHBT technology for high-speed optical communication systems. 269-272. Paper presented at Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States.

@conference{bb4755bb29cf46bd9d8796d45df76a2f,

title = "High-performance and high-uniformity InP/InGaAs/InP DHBT technology for high-speed optical communication systems",

abstract = "A high-performance and high-uniformity InP/InGaAs/InP double-hetero-structure bipolar transistors (DHBT) technology for high-speed optical communication systems was described. The InP/InGaAs DHBT's were grown on a 2-inch diameter (100) oriented InP substrate using metal-organic molecular beam epitaxy (MOMBE). The HBT device unit cell consisted of single- and multiple-finger devices with different emitter widths. The above technology was found suitable for integrated circuit fabrications as it exhibits good yields across wafer, wafer-to-wafer and lot-to-lot uniformity.",

author = "Y. Yang and J. Frackoviak and Liu, {C. T.} and Chen, {C. J.} and Chua, {L. L.} and Sung, {W. J.} and A. Tate and J. Tong and R. Reyes and R. Kopf and R. Ruel and D. Werder and V. Houtsma and G. Georgiou and Weiner, {J. S.} and Y. Baeyens and Chen, {Y. K.}",

year = "2002",

language = "English (US)",

pages = "269--272",

note = "Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) ; Conference date: 20-10-2002 Through 23-10-2002",

}

Yang, Y, Frackoviak, J, Liu, CT, Chen, CJ, Chua, LL, Sung, WJ, Tate, A, Tong, J, Reyes, R, Kopf, R, Ruel, R, Werder, D, Houtsma, V, Georgiou, G, Weiner, JS, Baeyens, Y & Chen, YK 2002, 'High-performance and high-uniformity InP/InGaAs/InP DHBT technology for high-speed optical communication systems', Paper presented at Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States, 10/20/02 - 10/23/02 pp. 269-272.

High-performance and high-uniformity InP/InGaAs/InP DHBT technology for high-speed optical communication systems. / Yang, Y.; Frackoviak, J.; Liu, C. T. et al.
2002. 269-272 Paper presented at Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - High-performance and high-uniformity InP/InGaAs/InP DHBT technology for high-speed optical communication systems

AU - Yang, Y.

AU - Frackoviak, J.

AU - Liu, C. T.

AU - Chen, C. J.

AU - Chua, L. L.

AU - Sung, W. J.

AU - Tate, A.

AU - Tong, J.

AU - Reyes, R.

AU - Kopf, R.

AU - Ruel, R.

AU - Werder, D.

AU - Houtsma, V.

AU - Georgiou, G.

AU - Weiner, J. S.

AU - Baeyens, Y.

AU - Chen, Y. K.

PY - 2002

Y1 - 2002

N2 - A high-performance and high-uniformity InP/InGaAs/InP double-hetero-structure bipolar transistors (DHBT) technology for high-speed optical communication systems was described. The InP/InGaAs DHBT's were grown on a 2-inch diameter (100) oriented InP substrate using metal-organic molecular beam epitaxy (MOMBE). The HBT device unit cell consisted of single- and multiple-finger devices with different emitter widths. The above technology was found suitable for integrated circuit fabrications as it exhibits good yields across wafer, wafer-to-wafer and lot-to-lot uniformity.

AB - A high-performance and high-uniformity InP/InGaAs/InP double-hetero-structure bipolar transistors (DHBT) technology for high-speed optical communication systems was described. The InP/InGaAs DHBT's were grown on a 2-inch diameter (100) oriented InP substrate using metal-organic molecular beam epitaxy (MOMBE). The HBT device unit cell consisted of single- and multiple-finger devices with different emitter widths. The above technology was found suitable for integrated circuit fabrications as it exhibits good yields across wafer, wafer-to-wafer and lot-to-lot uniformity.

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M3 - Paper

AN - SCOPUS:0036440087

SP - 269

EP - 272

T2 - Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)

Y2 - 20 October 2002 through 23 October 2002

ER -

High-performance and high-uniformity InP/InGaAs/InP DHBT technology for high-speed optical communication systems

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