High-performance and high-uniformity InP/InGaAs/InP DHBT technology for high-speed optical communication systems

Y. Yang, J. Frackoviak, C. T. Liu, C. J. Chen, L. L. Chua, W. J. Sung, A. Tate, J. Tong, R. Reyes, R. Kopf, R. Ruel, D. Werder, V. Houtsma, G. Georgiou, J. S. Weiner, Y. Baeyens, Y. K. Chen

Research output: Contribution to conferencePaperpeer-review

10 Scopus citations

Abstract

A high-performance and high-uniformity InP/InGaAs/InP double-hetero-structure bipolar transistors (DHBT) technology for high-speed optical communication systems was described. The InP/InGaAs DHBT's were grown on a 2-inch diameter (100) oriented InP substrate using metal-organic molecular beam epitaxy (MOMBE). The HBT device unit cell consisted of single- and multiple-finger devices with different emitter widths. The above technology was found suitable for integrated circuit fabrications as it exhibits good yields across wafer, wafer-to-wafer and lot-to-lot uniformity.

Original languageEnglish (US)
Pages269-272
Number of pages4
StatePublished - Jan 1 2002
Externally publishedYes
EventProceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) - Monterey, CA, United States
Duration: Oct 20 2002Oct 23 2002

Other

OtherProceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)
CountryUnited States
CityMonterey, CA
Period10/20/0210/23/02

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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