@inproceedings{333561b2fd754cfda7efc5aec8659edc,
title = "High performance electron blocking layer free ultraviolet lightemitting Diodes",
abstract = "Though AlGaN ultraviolet (UV) light-emitting diodes (LEDs) have been explored widely, their performance is still limited in the UV B and C regions due to several challenges. Electron leakage is one of the prominent reasons behind the poor performance of AlGaN deep UV LEDs. This problem can be mitigated by integrating the electron-blocking layer (EBL) between the active region and p-region to an extent, not entirely due to the own disadvantages of the EBL. In this regard, we report the achievement of high-performance EBL free AlGaN LEDs using a strip-in-a-barrier structure operating in the UV B and C regions, particularly at 254 nm and 292 nm wavelengths, respectively. Here, we have engineered each quantum barrier by integrating a 1 nm optimized intrinsic AlGaN strip layer in the middle of the QB. The resulting structure could significantly reduce the electron overflow and enhance the output power by ~1.87 times and ~1.48 times for 254 nm and 292 nm LEDs, respectively, compared to the conventional structure.",
keywords = "Algan light-emitting diodes, Electron leakage, Electron-blocking layer, Strip-in-a-barrier",
author = "Barsha Jain and Velpula, {Ravi Teja} and Moulik Patel and Nguyen, {Hieu P.T.}",
note = "Publisher Copyright: {\textcopyright} 2021 SPIE.; Physics and Simulation of Optoelectronic Devices XXIX 2021 ; Conference date: 06-03-2021 Through 11-03-2021",
year = "2021",
doi = "10.1117/12.2578869",
language = "English (US)",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Bernd Witzigmann and Marek Osinski and Yasuhiko Arakawa",
booktitle = "Physics and Simulation of Optoelectronic Devices XXIX",
address = "United States",
}